Direct Synthesis of α-Silicon Nitride Nanowires from Silicon Monoxide on Alumina

Abstract

Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and thermogravimetricdifferential scanning calorimetry. The results revealed that silicon nitride nanowires possess a diameter of about 200 nm and a length of several hundred micrometres. The preferred growth direction of the nanowires was [100]. The chemical and structural composition of the silicon nitride nanowires were also studied and were shown to have a composition of primarily α-Si 3 N 4. The temperature for fierce oxidation in air was above 1135°C. The formation mechanism of silicon nitride nanowires was assumed to be a vapour-solid (VS) process.

Formation of Aligned α-Si3N4 Microfibers by Plasma Nitridation of Si (110) Substrate Coated with SiO2

“…Ordered arrays of α-Si 3 N 4 nanowires have been also synthesized at 1150 • C with NH 3 [45,46]. Direct synthesis of α-Si 3 N 4 nanowires from silicon monoxide on alumina with N 2 /H 2 was also reported [47]. Similarly, it has been demonstrated that single-crystalline α-Si 3 N 4 nanowires can grow in a direction perpendicular to the wet-etched trenches in the SiO film on the plane of the Si substrate without metal catalysis [33].…”

Resilient and Antipuncturing Si3N4 Nanofiber Sponge

“… The Si gas was then transported by the swirling updraft flow to the graphite substrate above the crucible to react with N 2 according to eq , resulting in the nucleation and growth of Si 3 N 4 nanofibers. Such reaction is thermodynamically preferred according to the results in (Figure S6) and is found in other works Because there is some SiO gas in the system and the nucleation of the nanofiber is on a graphite substrate, eq may partially contribute to the nucleation of Si 3 N 4 nanofiber. As a result, the above-mentioned five equations are responsible for the formation and transportation of the Si source and nucleation and growth of the Si 3 N 4 nanofiber sponge.…”

Thermal Nanowiring of E-Waste: A Sustainable Route for Synthesizing Green Si3N4 Nanowires

“…In its various one-dimensional (1D) forms, such as nanowires (NWs) and nanobelts (NBs), silicon nitride (Si 3 N 4 ) , not only possesses the outstanding properties of its bulk counterpart but also displays its own unique properties. − These include superior photoelectric and mechanical properties, making Si 3 N 4 nanostructures potentially useful in many important areas, such as nanoelectronics, energy conversion and storage, lasers, chemical sensing and catalysis, and light/field emission devices, nanodevices, nanocomposites, , and reinforcement materials . A range of methods to synthesize Si 3 N 4 1D nanostructures with various morphologies (e.g., nanobelts, nanodendrites, and nanosheets) have been attempted and investigated.…”

“…25,26 As Si 3 N 4 could prove an excellent host material, in terms of its mechanical strength, thermal/chemical stability, and high dopant concentration, 25,26 it is considered a promising candidate for high-temperature microelectronic and optoelectronic applications, 27,28 and for use in high-radiation environments. 24 In its various one-dimensional (1D) forms, such as nanowires (NWs) and nanobelts (NBs), silicon nitride (Si 3 N 4 ) 29,30 not only possesses the outstanding properties of its bulk counterpart but also displays its own unique properties. 31−33 These include superior photoelectric and mechanical properties, making Si 3 N 4 nanostructures potentially useful in many important areas, such as nanoelectronics, energy conversion and storage, lasers, chemical sensing and catalysis, and light/ field emission devices, 25 nanodevices, nanocomposites, 34,35 and reinforcement materials.…”

“…31−33 These include superior photoelectric and mechanical properties, making Si 3 N 4 nanostructures potentially useful in many important areas, such as nanoelectronics, energy conversion and storage, lasers, chemical sensing and catalysis, and light/ field emission devices, 25 nanodevices, nanocomposites, 34,35 and reinforcement materials. 30 A range of methods to synthesize Si 3 N 4 1D nanostructures with various morphologies (e.g., nanobelts, nanodendrites, and nanosheets) 36 have been attempted and investigated. Traditionally, 1D Si 3 N 4 nanomaterials are prepared via chemical vapor deposition (CVD), 37,38 plasma enhanced CVD (PECVD), 39 microwave plasma heating, 40,41 carbothermal reduction, 42 catalytic pyrolysis of a polymer precursor, 16,43 sol−gel, 44 and combustion techniques.…”