Direct Tunneling-Induced Floating-Body Effect in 90-nm Pseudo-Kink-Free PD SOI pMOSFETs With DTMOS-Like Behavior and Low Input Power Consumption

Low-frequency noise properties have been investigated for SiGe p-type metal-oxidesemiconductor field effect transistors with different substrates using Si bulk and a partially depleted silicon-on-insulator (PD SOI). The electrical properties of SiGe PD SOI were enhanced in the subthreshold slope and drain induced barrier lowering. However, the low-frequency noise for the PD SOI was found to degrade significantly in terms of the power spectral density. The low frequency noise was observed to follow the typical 1/f γ (γ = 1) dependence in SiGe bulk devices, but abnormal changes with γ = 2 were revealed in the SiGe PD SOI. The difference of the noise frequency exponent was mainly attributed to generation-recombination by traps presented at the silicon-oxide interface of the SOI. Regardless of the degraded noise performance in the SOI structure, the low-frequency noise level remained well at an acceptable level by virtue of the effective carrier confinement in the SiGe channel.

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The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

Choi

Kim

et al. 2007

Semicond. Sci. Technol.

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Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Huang

Ning

et al. 2013

IEEE Trans. Nucl. Sci.

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Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI

2007

Journal of the Korean Institute of Electrical and Electronic Ma

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Direct Tunneling-Induced Floating-Body Effect in 90-nm Pseudo-Kink-Free PD SOI pMOSFETs With DTMOS-Like Behavior and Low Input Power Consumption

Cited by 4 publications

References 12 publications

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI

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Direct Tunneling-Induced Floating-Body Effect in 90-nm Pseudo-Kink-Free PD SOI pMOSFETs With DTMOS-Like Behavior and Low Input Power Consumption

Cited by 4 publications

References 12 publications

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si0.88Ge0.12 channel grown on bulk Si and a PD-SOI substrate

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI

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Product

Resources

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The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate

The low-frequency noise characteristics of p-type metal-oxide-semiconductor field effect transistors with a strained-Si_0.88Ge_0.12 channel grown on bulk Si and a PD-SOI substrate