Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs

Matsuoka, Toshimasa; Kakimoto, S.; Nakano, Takuro; Kotaki, Hiroshi; Hayashida, S.; Sugimoto, K.; Adachi, K.; Morishita, Satoshi; Uda, Keiichiro; Sato, Yuta; Yamanaka, M.; Ogura, Takashi; Takagi, Jun

doi:10.1109/iedm.1995.499350

Cited by 7 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A large number of techniques have been proposed and evaluated to engineer the concentration and distribution of nitrogen and oxygen in the silicon oxynitride films. Among them, the physical or chemical vapor deposition with various nitrogen based reaction sources, such as N 2 O [7][8][9][10], NO [11,12], and NH 3 [13][14][15] etc., can be used to directly grow a-SiO x N y films. Besides, the nitridation treatments [thermal [16] or plasma [17][18][19]] can also be used to control the nitrogen concentration in the grown SiO 2 films.…”

Section: Introductionmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

View full text Add to dashboard Cite

Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technologies for Si-based monolithic optoelectronic ICs, the research efforts on the optoelectronic applications of these materials have been continually increasing, particularly in the study of light emission properties and recombination mechanisms. In this paper, we first briefly outline the present photoluminescence (PL) mechanisms in amorphous silicon oxynitride (a-SiO x N y) films. Since, the PL properties and recombination processes are affected by both structural disorder and chemical disorder, the PL mechanism has been still unclear and even controversial until now. Among these various PL recombination models, the band tail states and defect state models have gained general consensus. Recently, a N-Si-O bond defect model has been reported, which depends on relative atom concentration of oxygen and nitrogen in the silicon oxynitride materials. It has been revealed that oxygen bonding plays a key role, not only in reducing the structural disorder, but also in creating N-Si-O (N x) defect states in the band gap. The characteristics of two models, namely band tail and N-Si-O bond defects, have been discussed in detail. Finally, it has been shown that by controlling the chemical composition of these non-stoichiometric silicon oxynitride materials, the optical and electronic properties can be improved. Keywords: amorphous silicon oxynitride (a-SiN x O y), PL mechanism, band tail model, N-Si-O bond defect model, a-SiN x O y LED

show abstract

Section: Introductionmentioning

confidence: 99%

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

et al. 2019

View full text Add to dashboard Cite

show abstract

“…The latter can provide more transparent understandings since it is made up of four key physical parameters: accumulation or inversion layer charge density, electron impact frequency on interface, WKB transmission probability, and specially, the reflection correction factor [3], [4]. As to another complementary devices, namely, p poly-gate pMOSFETs, the hole direct tunneling under channel inversion condition was found to dominate over valence electron direct tunneling [5], followed by Publisher Item Identifier S 0018-9383(00)09621-0. more evidences [6], [7]. In this paper, we present a model of the hole direct tunneling current featuring the above four similar physical parameters.…”

Section: Introductionmentioning

confidence: 99%

“…Simulated results (lines) and experimental data (symbols) for pMOSFET direct tunneling hole current of three different T under V < 0 V. V can be related to E by means of the C-V integration technique (5). Index and mean heavy and light holes, respectively.…”

mentioning

confidence: 99%

A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

Yang

Huang

Chang

et al. 2000

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A model of the hole direct tunneling gate current accounting for heavy and light hole's subbands in the quantized inversion layer is built explicitly. This model comprises four key physical parameters: inversion layer charge density, hole impact frequency on SiO 2 /Si interface, WKB transmission probability, and reflection correction factor. With the effective hole mass = 0 51 for parabolic dispersion relationship in the oxide, experimental reproduction without any parameter adjustment is consistently achieved in p + poly-gate pMOSFETs with 1.23, 1.85, and 2.16 nm gate oxide thicknesses. The proposed model can thereby serve as a promising characterization means of direct tunnel oxides. In particular, it is calculated that the secondary subbands and beyond, although occupying few holes, indeed contribute substantially to the direct tunneling conduction due to effective lower barrier heights, and are prevailing over the first subbands for reducing oxide field down below 1 MV/cm.

show abstract

Dielectric Reliability Measurement Methods: A Review

Martin

O'Sullivan

Mathewson

1998

Microelectronics Reliability

101

View full text Add to dashboard Cite

Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs

Cited by 7 publications

References 1 publication

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

Luminescence Mechanism in Amorphous Silicon Oxynitride Films: Band Tail Model or N-Si-O Bond Defects Model

A physical model for hole direct tunneling current in p/sup +/ poly-gate pMOSFETs with ultrathin gate oxides

Dielectric Reliability Measurement Methods: A Review

Contact Info

Product

Resources

About