Direct Video Imaging of X-Ray Topographs

Abstract

In this paper, a video display system for direct imaging of transmission and reflection x-ray topographs of Si and GaAs wafers is described. This system allows instantaneous viewing of x-ray topographs with fields of view on the order of 2 cm by 1 cm. The resolution of the system is now limited by the sensitivity of the x-ray phosphor to about 30 μ. Slip bands and diffused devices have been directly observed in both Si and GaAs, as have been accidentally induced damage such as scratches and wafer warpage. Also, Laue patterns for orientation of wafers and ingots can be directly viewed, eliminating the time consuming method of film techniques.

Synchrotron radiation – its application to high-speed, high-resolution X-ray diffraction topography

“…Many authors have reported systems based on X-ray sensitive vidicons (Chikawa & Fujimoto, 1968), conventional television with phosphor screens, sometimes with image intensifiers interposed (Meieran, Landre & O'Hara, 1969;Lang & Reifsnider, 1909;Kozaki, Hashizume & Kohra, 1972) and charge sensitive diode arrays (Rozgonyi, Haszko & Statile, 1970). With conventional sources these authors reported exposure times between 0.5 s and one minute with resolutions in the range from 10/~m to 30/zm over areas of a few mm square.…”

A High-Gain Light-Intensifying Device Incorporating a Fiber-Optic X-Ray Intensifying Faceplate

“…This was Papers 155 and 156 presented at the Cleveland, Ohio, Meeting of the Society, Oct. [3][4][5][6][7] 1971.…”

“…Tubes such as the SEC vidicon, or the orthacon with a single state intensifier added in front, are used to process and display the image on a monitor (5,6). Such devices usually have less resolution (of the order of 30-50~) and medium sensitivity to x-rays.…”

Display of X-ray topographic images using a channel plate

“…I n the past few years several systems have been reported for the direct viening of X-ray topographic images [l to 5 ) . Two of them rely on converting the X-rays to electrical signals by means of a n X-ray vidicon, where either a lead oxide (PbO) 111 or silicon diode array [ 2 ] is used as the target. I n the othci.…”