Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7−δ Thin Films

Marinković, Stefan; Fernández‐Rodríguez, Alejandro; Collienne, Simon; Alvarez, Sylvain Blanco; Melinte, Sorin; Maiorov, B.; Rius, Gemma; Granados, X.; Mestres, N.; Palau, Anna; Silhanek, Alejandro

doi:10.1021/acsnano.0c04492

Cited by 17 publications

(20 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our resistor network simulations show that the insulating barrier that forms during the M → I volatile switching concentrates not only the dissipated power but also the applied voltage. It is possible that the transverse barrier formation can occur in systems which feature a nonvolatile low-to-high-resistance switching caused by ion electromigration, such as rare-earth nickelates 77,78 , manganites [77][78][79][80][81][82] , and cuprates 77,79,83 . In fact, spatial patterns previously reported for the nonvolatile switching in YBa 2 Cu 3 O 7 83 , LSMO 84 and in NdNiO 3 85 can be rationalized by considering the tendency of low-to high-resistance switching to occur by the formation of a transverse insulating barrier.…”

Section: Discussionmentioning

confidence: 99%

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

et al. 2021

View full text Add to dashboard Cite

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

show abstract

Section: Discussionmentioning

confidence: 99%

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Understanding the mechanism behind these changes in the oxygen content and ordering is a key point in controlling the final superconducting properties of the CCs. Besides, it will also allow a better comprehension of other phenomena related with the oxygen content in REBCO films as, for example, the resistive switching. , …”

Section: Introductionmentioning

confidence: 99%

“…Besides, it will also allow a better comprehension of other phenomena related with the oxygen content in REBCO films as, for example, the resistive switching. 9,10 Within the family of REBCO, YBa 2 Cu 3 O 7−δ (YBCO) is probably the best-known and -studied compound since it was the first superconductor showing a T c above liquid-nitrogen temperature (LN 2 , 77 K). However, there are other REBCO compounds that could exhibit better electrical properties than YBCO aside from small improvements in T c and, therefore, be very attractive materials to be studied in depth.…”

Section: ■ Introductionmentioning

confidence: 99%

Determination of the Oxygen Chain Ordering in REBa₂Cu₃O_7–δ by Electrical Conductivity Relaxation Measurements

Cayado

Hauck

Barthlott

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Electrical conductivity relaxation was measured to investigate the kinetics of oxygen incorporation (in-diffusion process) and excorporation (out-diffusion process) in different epitaxial REBa2Cu3O7−δ thin films prepared by chemical solution deposition. The oxygen diffusion in these compounds happens in two distinct regimes with different activation energies, which depend on the compound. As the detailed X-ray analysis of similarly processed REBa2Cu3O7−δ films revealed, the transition temperature between these two regimes is compatible with a transition in the oxygen ordering in the Cu–O chains from the Ortho-II phase to the Ortho-I phase. These transitions may be of great importance for further optimization of the oxygenation process during the synthesis of these compounds but may depend not only on the rare-earth (RE) element but also on further factors such as variations of stoichiometry. The presented electrical conductivity measurements provide easy access to the determination of these transition temperatures.

show abstract

“…In ref. [13] it has been shown that after electromigration part of the bridge becomes deoxygenated down to a certain minimum value x min whereas other zones are oxygenated up to an upper value x max . This can be understood as a consequence of a concentration‐dependent activation energy E a ( x ).…”

Section: Resultsmentioning

confidence: 99%

“…Recently, a radically different approach consisting in current‐induced migration of oxygen, has been proposed. [ 13 ] This technique has been implemented to scan the entire temperature‐hole concentration phase diagram in a single sample. [ 14 ] In this case, the agglomeration of oxygen vacancies manifests itself as a zone of higher reflectivity thus permitting to track the temporal evolution of the affected area by optical microscopy.…”

Section: Introductionmentioning

confidence: 99%

Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in YBa₂Cu₃O_7−δ Films

Collienne

Marinković

Fernández‐Rodríguez

et al. 2022

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

this material but seems to be generally observed in a vast majority of complex oxide compounds. From a technological standpoint, it is imperative to understand and master oxygen diffusion through thermal processing, in order to achieve high-end coated-conductors and reliable bipolar non-volatile resistive switchers. Consequently, an understanding of the chemical diffusion in YBCO may bear profound implications to a large diversity of oxide materials and their derived applications.The variation of oxygen concentration in YBCO mostly occurs in the O(1) sites of the CuO chains along the crystallographic b-axis. In the superconducting orthorhombic phase (δ ≈ 0), if the O(1) atom migrates to a neighboring vacant O(5) site, it will find a channel along the b-axis direction with essentially no diffusion barrier. [2] It is expected that the associated activation energy E a will depend strongly on the amount of oxygen atoms per unit cell, with E a lowering as the number of available sites (i.e., δ) increases. This has been indeed experimentally confirmed in YBCO crystals for which it was reported E a = 1.3 eV for δ = 0 and E a = 0.5 eV for δ = 0.38. [3] In addition, isotopic 18 O tracer diffusion measurements by Rothman et al. [4] indicated a value of E a = 0.97 eV in the ab-plane of bulk YBCO pellets. Similar value was reported for YBCO single crystals with stoichiometry δ = 0.5 by Veal et al. [5] through thermal annealing process. Soon after, Choi et al. [6] calculated the oxygen tracer diffusion coefficients using the cluster variation method in conjunction with the path probability method for a perfect lattice and showed that activation energies are significantly dependent on the oxygen density and the degree of long-range order, with E a = 0.8 eV in the tetragonal phase and E a = 1.2 eV in the orthorhombic phase. The fact that the activation energies for the oxygen diffusion decrease with decreasing oxygen content was also confirmed in laser ablated thin films by Krauns and Krebs. [7] In ref.[8], a migration energy as low as 0.3 eV has been calculated for oxygen ions in the ab-plane using a shell model for the orthorhombic phase. A more in-depth investigation of oxygen tracer diffusion in untwined single-crystalline YBCO showed that the diffusion along the b direction can be at least 100 times faster than diffusion along the a direction. [9] In all cases, diffusion along c-axis was shown to be substantially slower than within the ab-plane.

show abstract

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

Cited by 17 publications

References 46 publications

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Determination of the Oxygen Chain Ordering in REBa₂Cu₃O_7–δ by Electrical Conductivity Relaxation Measurements

Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in YBa₂Cu₃O_7−δ Films

Contact Info

Product

Resources

About

Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7−δ Thin Films

Cited by 17 publications

References 46 publications

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Determination of the Oxygen Chain Ordering in REBa2Cu3O7–δ by Electrical Conductivity Relaxation Measurements

Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in YBa2Cu3O7−δ Films

Contact Info

Product

Resources

About

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

Determination of the Oxygen Chain Ordering in REBa₂Cu₃O_7–δ by Electrical Conductivity Relaxation Measurements

Electrically‐Driven Oxygen Vacancy Aggregation and Displacement in YBa₂Cu₃O_7−δ Films