2024
DOI: 10.1016/j.ijhydene.2023.11.180
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Direct Z-scheme GaTe/SnS2 van der Waals heterojunction with tunable electronic properties: A promising highly efficient photocatalyst

Jiaxin Wang,
Jinzhe Xuan,
Xing Wei
et al.
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Cited by 13 publications
(2 citation statements)
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“…Recent studies have focused on the development of S-scheme and Z-scheme photocatalysts (see Table 1) due to their efficient charge separation and band modulation properties. 112–117…”
Section: Sns2 Properties and Photocatalytic Applicationsmentioning
confidence: 99%
“…Recent studies have focused on the development of S-scheme and Z-scheme photocatalysts (see Table 1) due to their efficient charge separation and band modulation properties. 112–117…”
Section: Sns2 Properties and Photocatalytic Applicationsmentioning
confidence: 99%
“…It has been proven that the in-plane biaxial strain can change the out-of-plane dipole moment of g-ZnO and achieve the band structure modulation of g-ZnO-based vdWHs as novel photocatalysts . Electric field engineering has been proved to be a nondestructive and reversible method to continuously tune the electronic properties of vdWHs. It has been reported that external electric field might lead to occupied nearly free-electron (NFE) states in some materials, like GaSe/GeS heterostructures . Usually, the NFE states possess high energies and exist far above the Fermi level ( E f ), and these unoccupied NFE states are unsuitable for charge transport. , Materials with the occupied NFE states can provide effective electron transport channels in nanoelectronic devices, and can be applied in gas sensors and high-temperature superconductors. , …”
Section: Introductionmentioning
confidence: 99%