Directed self-assembly of block copolymers for sub-10 nm fabrication

Abstract

Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3–5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in−2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput. The development of high χ block copolymer further enhances the patterning resolution of DSA. In addition to its superiority in high-resolution patterning, the implementation of DSA on a 300 mm pivot line fully demonstrates its potential for large-scale, high-throughput, and cost-effective manufacturing in industrial environment.

Block Copolymer Directed Metamaterials and Metasurfaces for Novel Optical Devices

“…[269][270][271] However, approaches for ultrahigh dense customized periodic metal nanoparticles arrays are still challenging. [272] Recently, Wang and co-workers have presented a novel route for reliable fabrication of customized periodic metal nanoparticles. [273] Thus, ultradense metal nanogap structures were obtained by evaporation of metallic gold layers over hexagonally packed poly-styrene columns, prepared by thin-film BCP self-assembly (Figure 13A).…”

“…[ 269–271 ] However, approaches for ultrahigh dense customized periodic metal nanoparticles arrays are still challenging. [ 272 ]…”

Green Nanofabrication Opportunities in the Semiconductor Industry: A Life Cycle Perspective

“…Non-radiative patterning techniques such as ASD and DSA are less mature techniques but potentially circumvent these issues by not having a diffraction limit in resolution, and by patterning directly onto functional materials [ 137 , 156 ]. For example, optimising the sensitivity of photoresists to imaging radiation is no longer a requirement [ 137 ].…”

Solvent Vapor Annealing, Defect Analysis, and Optimization of Self-Assembly of Block Copolymers Using Machine Learning Approaches

“…The spontaneous self-assembly of block copolymers (BCPs) to generate patterns and motifs with sub-lithographic resolution has been of great interest for over two decades as an alternative or complementary technique to photolithography. [1][2][3][4][5][6][7][8][9][10] When integrated with sparse guiding morphological or chemical features produced via traditional lithography, these low cost polymer processing methods enable the generation of templates for production of sub-10 nm features with a high degree of long range order. 11 This combination of self-assembly with lithography is termed directed self-assembly (DSA) and has been primarily directed towards applications in microelectronics, including memory storage materials, 6,12,13 finFET, 5,14,15 and vias.…”