Directional electromigration-enhanced interdiffususion in the Cu–Ni system

Zhao, Jinfeng; Garay, Javier E.; Anselmi‐Tamburini, Umberto; Munir, Zuhair A.

doi:10.1063/1.2809444

Cited by 43 publications

(16 citation statements)

References 21 publications

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“…Electromigration can also lead to interdiffusion at interfaces or phase separation in alloys. When the current was flowing from Ni to Cu, a marked increase of the interdiffusion was observed as compared to the case where the current was flowing from Cu to Ni (Zhao et al, 2007).…”

Section: A Electromigration Of Alloysmentioning

confidence: 86%

Electromigration and the structure of metallic nanocontacts

Hoffmann‐Vogel

2017

Applied Physics Reviews

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FIG. 5. STM set-up used in the literature for studying nanoscale metallic junctions with TEM. The set-up very much resembles a standard STM setup, except that this instrument is used under the electron beam of a TEM. Reprinted with permission from Ohnishi et al., Nature 395, 780 (1998). FIG. 6. (a) If microscopic and macroscopic effects are to be summarized in one picture, diffusion under the influence of electromigration forces can be understood as hopping in a tilted washboard-potential. (b) Energy landscape for a hopping atom with a definition of its energy parameters.

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Section: A Electromigration Of Alloysmentioning

confidence: 86%

Electromigration and the structure of metallic nanocontacts

Hoffmann‐Vogel

2017

Applied Physics Reviews

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“…8), 9) In the case of the formation of solid solution, the effect of the current on the interdiffusivity in the Cu-Ni system was investigated over a temperature range of 923-1123 K and at current values in the range of 0-1000 A. 10) When the electronic flow was from Ni to Cu, interdiffusivity showed a marked increase relative to copper content, but it was unchanged when the electronic flow was from Cu to Ni. The sign of effective valance for Ni and Cu self-diffusion are both negative.…”

Section: Introductionmentioning

confidence: 99%

Influence of pulsed DC current and electric field on growth of carbide ceramics during spark plasma sintering

Kondo

Kuramoto

Kodera

et al. 2008

J. Ceram. Soc. Japan

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The influence of the pulsed DC current and the electric field on the growth of TiC and ZrC layers using Spark Plasma Sintering was investigated at temperature ranging from 1373 to 1823 K. From the results of XRD and EDS analyses, the product layer formed between Ti and C was only TiC, and the layer between Zr and C was only ZrC. In all systems, the thickness and the growth rate constant of the product layers were enhanced in the system with the current compared to that in the system with the negligible current. The activation energy for the TiC layer growth was calculated to be 269 ± 3 kJ/mol in the system with the current, which is smaller than the activation energy of 273 ± 2 kJ/mol in the system with the negligible current. In the Zr-C system, these values were 205 ± 7 kJ/mol and 224 ± 1 kJ/mol, respectively. The increase in the growth of the TiC and ZrC layers was unaffected by the current direction and suggested that the increased point defect mobility by passing the current was a dominant cause of the enhanced growth.

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“…Zhao et al [17] investigated interdiffusion coefficient of Cu and Ni in the temperature range of 650 and 850°C as presented in Fig. 2(c).…”

Section: Interdiffusionmentioning

confidence: 99%

Simultaneous Measurement of Isotope-Free Tracer Diffusion Coefficients and Interdiffusion Coefficients in the Cu-Ni System

Schulz

Mehta

Belova

et al. 2018

J. Phase Equilib. Diffus.

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A new formalism recently developed by Belova et al., based on linear response theory combined with the Boltzmann-Matano method, allows determination of tracer and interdiffusion coefficients simultaneously from a single, isotope-free, traditional diffusion couple experiment. An experimental methodology with an analytical approach based on the new formalism has been carried out using the model Cu-Ni system to effectively determine tracer diffusion coefficients from an isotope-free diffusion couple experiment. Cu thin films were deposited in between several binary diffusion couples with varying terminal alloy compositions (Cu-25Ni, Cu-50Ni, Cu-75Ni, Ni). Diffusion couples were annealed at 800, 900 and 1000°C, and the superimposed concentration profiles of thin film and interdiffusion were analyzed for the simultaneous determination of tracer and interdiffusion coefficients. Processed concentration profiles obtained from the diffusion experiments were also fitted with simple Gaussian distribution function. Results were compared to existing literature data obtained independently by radiotracer experiments, and an excellent agreement has been observed.

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Directional electromigration-enhanced interdiffususion in the Cu–Ni system

Cited by 43 publications

References 21 publications

Electromigration and the structure of metallic nanocontacts

Electromigration and the structure of metallic nanocontacts

Influence of pulsed DC current and electric field on growth of carbide ceramics during spark plasma sintering

Simultaneous Measurement of Isotope-Free Tracer Diffusion Coefficients and Interdiffusion Coefficients in the Cu-Ni System

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