Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation

Abstract

Expérience GANIL/IRRSU

Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films

“…The slopes of linear fits (listed in Table 1b) representing magnitude of strain change from a positive to negative value upon irradiation of the pristine film, but again increases with increase in ion fluence, reaching a positive value at the highest fluence of 3 Â 10 13 ions/cm 2 . Similar variation of strain with ion irradiation has also been observed in irradiated SiO 2 thin films [29,30]. After an initial change from positive to negative value, gradual crystallization with ion fluence induces strain relaxation that takes its value close to zero at 10 13 ions/cm 2 .…”

“…High electronic energy released by the ion beams in a very short interval of time produces significant excitation of the lattice, causing changes in the structural, electrical, and optical behaviour of the materials. In case of metal oxide thin films, interesting effects such as nano-structuring, dewetting, atomic, and interface mixing [10][11][12] have been observed that prompted films of HfO 2 , SiO 2 , CeO 2 , ZnO, Fe 2 O 3 , CuO, MoO 3 [13][14][15][16][17][18], etc., to be modified by SHI irradiation. For SnO 2 material, however, SHI irradiation effects have been limited only to nano-crystalline powders [19,20].…”

p-Type gas-sensing behaviour of undoped SnO2 thin films irradiated with a high-energy ion beam

“…The high S e released by the ion beams in a very short interval of time produces significant excitation of the lattice, introducing defect levels that cause fundamental changes in the electronic structure and properties of the materials. The usefulness of this technique has been widely investigated in recent times on different oxide thin films, such as HfO 2 , SiO 2 , CeO 2 , ZnO, and Fe 2 O 3 [6][7][8][9]. However, very few studies reported ion beam-induced modifications of undoped SnO 2 thin films.…”

Study of surface morphology of ferrofluid deposited etched ion tracks in dielectric layers

“…In this respect, AFM offers an advantage over conventional techniques to study the SHI induced surface modifications. Many features of this type of materials have been reported previously (Lu et al, 2000;Singh et al, 2000;Srivastava et al, 2002;Carlotti et al, 2006;Martin et al, 2006Martin et al, , 2007Carvalho et al, 2007Carvalho et al, , 2008. The etching followed by subsequent filling with appropriate filler creates tunable electronic material with pores in oxide on silicon (TEMPOS) structures.…”