Discovery of a metastable van der Waals semiconductor <i>via</i> polymorphic crystallization of an amorphous film

Saito, Yuta; Hatayama, Shogo; Chang, Wen Hsin; Okada, Naoya; Irisawa, Toshifumi; Uesugi, Fumihiko; Takeguchi, Masaki; Sutou, Yuji; Fons, Paul

doi:10.1039/d2mh01449a

Mater. Horiz.

2023

DOI: 10.1039/d2mh01449a

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Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Yuta Saito

Shogo Hatayama

Wen Hsin Chang

et al.

Abstract: Here, we report on the growth of GeTe2 thin films, a metastable phase. The GeTe2 film was found to be a semiconductor with a layered structure.

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Cited by 3 publications

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Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe₂ Case

Usuki,

Benmore,

Tverjanovich

et al. 2024

Physica Rapid Research Ltrs

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Brain‐inspired computing, reconfigurable optical metamaterials, photonic tensor cores, and many other advanced applications require next‐generation phase change materials (PCMs) with better energy efficiency and a wider thermal and spectral range for reliable operations. Germanium ditelluride (GeTe2), with higher thermal stability and a larger bandgap compared to current benchmark PCMs, appears promising for THz metasurfaces and the controlled crystallization of atomically thin 2D materials. Using high‐energy X‐ray diffraction supported by first‐principles simulation, we investigate the atomic structure in semiconducting pulsed laser deposition films and metallic high‐temperature liquids. The results suggest that the structural and chemical metastability of GeTe2, leading to disproportionation into GeTe and Te, is related to high internal pressure during a semiconductor‐metal transition, presumably occurring in the supercooled melt. Similar phenomena are expected for canonical GeS2 and GeSe2 under high temperatures and pressures.This article is protected by copyright. All rights reserved.

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Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe₂ Case

Usuki,

Benmore,

Tverjanovich

et al. 2024

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

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2D amorphous solids for sub-nanometer scale devices

Jang,

Kim,

Kim

et al. 2024

Nano Convergence

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Amorphous solids are a type of condensed matter characterized by the absence of long-range order in their lattice structure. However, they still exhibit short- or medium-range order, which contributes to their versatile local and global electronic and chemical properties. Recently, 2D amorphous solids have gained attention for their exceptional mechanical and electronic features, which are unattainable in conventional crystalline materials. This review highlights the physical properties of ultrathin 2D amorphous solids, which are formed through covalent bonding and feature polyhedron structures with shared edges and corners. Two notable examples of 2D amorphous solids include honeycomb-structured nanosheets with mixed hybrid orbitals and layered materials with reduced coordination numbers of the elements. We provide an in-depth discussion of (1) the phase transition between crystalline and amorphous phases in 2D solids, (2) advanced synthetic methods for producing high-quality amorphous films with precise thickness control, and (3) the potential applications of sub-nanometer scale 2D amorphous solids. Lastly, we explore their potential to revolutionize the design of highly versatile electronic devices at sub-nanometer scales. Graphical Abstract

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層状カルコゲナイドが拓く電子デバイス材料の新展開

et al. 2023

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scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

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Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Abstract: Here, we report on the growth of GeTe2 thin films, a metastable phase. The GeTe2 film was found to be a semiconductor with a layered structure.

Cited by 3 publications

References 34 publications

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe₂ Case

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe₂ Case

2D amorphous solids for sub-nanometer scale devices

層状カルコゲナイドが拓く電子デバイス材料の新展開

Contact Info

Product

Resources

About

Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Abstract: Here, we report on the growth of GeTe2 thin films, a metastable phase. The GeTe2 film was found to be a semiconductor with a layered structure.

Cited by 3 publications

References 34 publications

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

2D amorphous solids for sub-nanometer scale devices

層状カルコゲナイドが拓く電子デバイス材料の新展開

Contact Info

Product

Resources

About

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe₂ Case

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe₂ Case