Cu2ZnSnSe4 is
a direct band gap semiconductor
composed of earth-abundant elements, making it an attractive material
for thin-film photovoltaic technologies. Cu2ZnSnSe4 crystallizes in the kesterite structure type as a bulk material,
but it can also crystallize in a metastable wurtzite-like crystal
structure when synthesized on the nanoscale. The wurtzite-like polymorph
introduces unique and useful properties to Cu2ZnSnSe4 materials, including widely tunable band gaps and superior
compositional flexibility as compared to kesterite Cu2ZnSnSe4. Here, we investigate the formation pathway of colloidally
prepared wurtzite-like Cu2ZnSnSe4 nanocrystals.
We show that this quaternary material forms through a chain of reactions,
starting with binary Cu3Se2 nanocrystals that,
due to both kinetic and thermodynamic reasons, preferentially react
with tin to yield hexagonal copper tin selenide intermediates. These
ternary intermediates then react with zinc to form the resulting wurtzite-like
Cu2ZnSnSe4 nanocrystals. Based on this formation
pathway, we suggest synthetic methods that may prevent the formation
of unwanted impurity phases that are known to hamper the efficiency
of Cu2ZnSnSe4-based optoelectronic devices.