Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

“…Because, at low-temperatures, more and more electrons can cross the the existence of low barriers or patches at around mean BH and so leads an increase in the reverse-saturation currend and hence leads an increase in Φ B0 and a large n values. 14,16,17 Accordingly, current conduction is delimitated by I passing through the lower-barriers. However, with the increase in temperature, the electrons can gain more energy to cross higher barriers.…”

“…In general, the BH value extracted from the standard TE theory is usually decrease with temperature and n increases due to the existence inhomogeneities of BH at M/S interface and these higher changes at lower temperaures cannot explain only in terms of standard TE and TFE theories. [11][12][13][14] The objective of this work is to an investigate temperature dependent basic electric parameters and possible CTCs in the Au/Al 2 O 3 /n-Si SDs between 200 K and 400 K by using the IV between ±3 V. In this study, the increase in BH observed with increase in the temperature, higher values of n even at room temperature, and the deviation linearity of the conventional RP were successfully explained by the GD-model.…”

“…During the preparation of samples, many Nss with energies located at Eg may be occurred and alter performance of them. [12][13][14] Therefore, it is more significant to determine the energy distribution of Nss and re-ordering of them under temperature effect. In general, the BH value extracted from the standard TE theory is usually decrease with temperature and n increases due to the existence inhomogeneities of BH at M/S interface and these higher changes at lower temperaures cannot explain only in terms of standard TE and TFE theories.…”

Analysis of Series Resistance's (RS) Impact on Ag/Perylene/n-Si Schottky Barrier Diode (SBD) in Various Techniques

“…Metal-semiconductor-type SBDs transform into MIS/MFS/MPS-kind of SBDs when an interface is formed among metal and semiconductors. But, the interlayer is higher than at about 4-5 hundred nanometers, this structures act a capacitor which storage more electrons or energy (Sze & Ng, 2007;Gencer Imer et al, 2019;Altındal et al, 2022). However, the used an interlayer can be considerably affect both the basic electrical parameters and conduction mechanism of these a structures.…”

An alternative approach to extract diode parameters from metal–semiconductor–metal asymmetric Schottky diodes

“…Among various factors, a lower potential barrier at the MS interface often aids in ohmic nature of the contact [1]. In practice, MS contacts (both ohmic and Schottky) are often fabricated using various deposition processes [2][3][4][5][6][7][8] and formation of a good ohmic contact is very much necessary to carry out accurate current-voltage (I-V) and other electron transport measurements. Assuming thermionic emission (TE) as the dominating charge transport mechanism, the current-voltage relationship of a Schottky diode resembles a p-n one apart from the fact that only majority carriers dominate in case of a Schottky diode, and from semi-logarithmic I-V plot; diode parameters such as Ideality factor (n), Barrier Height (Φ), and series resistance (R S ) can be extracted [9].…”