2007
DOI: 10.1039/b707884f
|View full text |Cite
|
Sign up to set email alerts
|

Discrete charge transfer in nanoparticle solid films

Abstract: A brief overview of the recent progress in single electron transfer (SET) in nanoparticle solid films is presented. In these studies, Langmuir-based techniques were employed to control the interparticle interactions, and the ensemble conductivity was evaluated by electrochemical measurements. Deliberate manipulation of the ensemble structure and temperature led to the optimization of the conductivity properties where SET was initiated across a nanoparticle solid film.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

1
23
1

Year Published

2008
2008
2021
2021

Publication Types

Select...
4
1
1

Relationship

1
5

Authors

Journals

citations
Cited by 25 publications
(25 citation statements)
references
References 52 publications
1
23
1
Order By: Relevance
“…QCC was reported for isolated gold NPs (1.1–1.9 nm in diameter) and 3D array of gold NPs (2.2 and 1.6 nm in diameter) isolated from one another by insulating ligands. [ 25–27 ] Given the constant current ( I , 10–100 µA) and the oscillatory R – t curve, the QCC was then estimated by integration of the charges under the V – t curve ( C QCC = Q / V = I Δ t / V ). For example, from data in Figure 3b, the average C QCC = 1.0 × 10 −4 F. By further considering the single particle's theoretical capacitive charging (see the Experimental Section for details of the theoretical equations and parameter descriptions), we estimated that the particle radius responsible for the QCC to be 0.6–0.9 nm is in a close agreement with the experimentally determined radius for the NCs (0.7 nm) in the bimodal distribution (Figure S1, Supporting Information).…”
Section: Figurementioning
confidence: 99%
“…QCC was reported for isolated gold NPs (1.1–1.9 nm in diameter) and 3D array of gold NPs (2.2 and 1.6 nm in diameter) isolated from one another by insulating ligands. [ 25–27 ] Given the constant current ( I , 10–100 µA) and the oscillatory R – t curve, the QCC was then estimated by integration of the charges under the V – t curve ( C QCC = Q / V = I Δ t / V ). For example, from data in Figure 3b, the average C QCC = 1.0 × 10 −4 F. By further considering the single particle's theoretical capacitive charging (see the Experimental Section for details of the theoretical equations and parameter descriptions), we estimated that the particle radius responsible for the QCC to be 0.6–0.9 nm is in a close agreement with the experimentally determined radius for the NCs (0.7 nm) in the bimodal distribution (Figure S1, Supporting Information).…”
Section: Figurementioning
confidence: 99%
“…It should be noted that the activation energy of the as-prepared film is very close to those found with dropcast films of nanoparticles of similar structures 11 and the E a value of the annealed film is consistent with that of nanoparticle Langmuir-Blodgett monolayers that exhibit clear SET features. [2][3][4] As mentioned earlier, rampant structural defects within the as-prepared particle films lead to effective percolation pathways for interparticle charge transport, whereas after thermal annealing the energetic barrier to charge transfer increases because of the ordered arrangements of the nanoparticle cores in the organic matrix.…”
mentioning
confidence: 85%
“…1 More recently, single electron transfer ͑SET͒ across a nanoparticle monolayer film has also been observed in solid-state electronic conductivity study by deliberate manipulation of the nanoparticle structures and interparticle arrangements. [2][3][4] However, with nanoparticle thick films, particularly particle films that are prepared by dropcasting a concentrated solution onto an electrode surface, the current-potential profiles are typically featureless. This is largely attributed to the rampant structural defects within the particle films that render it difficult to resolve the individual charging step.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…[9,10] Integration of nanocrystal assemblies in scaleable devices requires their selective organization at discrete locations on a semiconductor substrate. The idealized nanocrystal-device architecture is a combination of top-down lithography for pattern features >50 nm in size and bottom-up assembly for critical dimensions below this limit.…”
mentioning
confidence: 99%