Discussion of “thermodynamics of the Si-C-O system for the production of silicon carbide and metallic silicon

Rosenqvist, Terkel; Tuset, Johan Kr.

doi:10.1007/bf02656168

Cited by 20 publications

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“…16. However the existence of SiO(l) is controversial [25][26][27] and has not been clearly observed at the SiC/SiO 2 interface. Balat et al [18,19] have used the Wagner model and also the simultaneous occurrence of passive and active oxidation according to reactions 1a and 2a, respectively.…”

Section: Introductionmentioning

confidence: 99%

Active Oxidation of SiC

2010

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Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO 2 ) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O 2 /Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO 2 interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O 2 /Ar and reduced total O 2 pressure cases for SiC.

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