“…The creep strain rate, _ e c ij , is related to the dislocation density, which can be described by the HAS model [14,15]. In the HAS model for a multiaxial stress state [16], the creep strain rate, _ e c ij , and the multiplication rate of mobile dislocation density, _ N m , are given by where b is the magnitude of the Burgers vector, k is Boltzman's constant, T is absolute temperature in a silicon crystal, Q is the Peierls potential, k 0 , K, p and l are some material constants, D is the strain hardening factor, S ij and J 2 are the deviatoric stress and the second invariant of the deviatoric stress, respectively, and ffiffiffiffi J 2 p indicates the equivalent shear stress. The value of t eff is set to zero…”