Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals

Okamoto, Kuniyoshi; Ohta, Hiromichi; Nakagawa, Daisuke; Sonobe, Masayuki; Ichihara, Jun; Takasu, H.

doi:10.1143/jjap.45.l1197

Cited by 133 publications

(89 citation statements)

References 25 publications

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“…1͒ have been grown on r-plane sapphire, 3 ͑100͒ ␥-LiAlO 2 , 1 a-and m-plane SiC, 4,5 and more recently on a-and m-plane GaN substrates. 6,7 Semipolar nitride films have been mostly grown by using lateral epitaxial overgrowth techniques 8 but also on m-plane sapphire, 9 Si͑001͒, 10 and semipolar GaN bulk substrates. 11,12 The structural characteristics of the nonpolar and semipolar nitride films are expected to be anisotropic as a result of the anisotropies of film and substrate surfaces.…”

Section: Introductionmentioning

confidence: 99%

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a-and m-plane surface orientations on r-plane sapphire and ͑100͒ ␥-LiAlO 2 , respectively, and semipolar ͑1011͒ InN grown on r-plane sapphire. The on-axis rocking curve ͑RC͒ widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN ͓0001͔ for the a-plane films, and maxima at InN ͓0001͔ for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN͑111͒A and InN͑111͒B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a-and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

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Section: Introductionmentioning

confidence: 99%

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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“…5 Light-emitting diodes based on m-plane GaN with promising device performance have been reported as well. 6,7 However, all heteroepitaxial non-polar structures suffer from high stacking fault (SF) densities of up to 10 5-…”

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confidence: 99%

Optical and structural studies of homoepitaxially grown m-plane GaN

Khromov

Ḿonemar

Avrutin

et al. 2012

Applied Physics Letters

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Cathodoluminescence (CL) and transmission electron microscopy studies of homoepitaxially grown m-plane Mg-doped GaN layers are reported. Layers contain basal plane and prismatic stacking faults (SFs) with ∼106 cm−1 density. Broad emission peaks commonly ascribed to SFs were found to be insignificant in these samples. A set of quite strong, sharp lines were detected in the same spectral region of 3.36–3.42 eV. The observed peaks are tentatively explained as excitons bound to some impurity defects, which can also be related to SFs. Donor-acceptor pair (DAP) recombination involving Si or O and Mg was ruled out by fitting DAP energies and CL mapping.

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“…A few years later, an m-plane LED with higher EQE (EQE 3.1% at 20 mA for 1.79 mW and 435 nm), (16) an m-plane LED with higher output power (EQE 38.9% at 20 mA for 23.7 mW and 407 nm), (17) and a high-brightness semipolar LED (EQE 33.9% at 20 mA for 20.6 mW and 411 nm) (18) were reported. Based on the nonpolar/semipolar device technology, Professor Nakamura founded a venture company called Soraa with two other UCSB professors and they released high-performance LED light bulbs in 2012 (Fig.…”

Section: Challenges Toward Realizing Innovative Devices Using Gan Submentioning

confidence: 99%

Current Status and Future Prospects of GaN Substrates for Green Devices

2013

Sensors and Materials

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Recently, single-crystal substrates applied to optoelectronic devices, such as sapphire, GaN, and SiC, have been attracting much attention for use in green devices. At present, they are mainly used for the blue-violet semiconductor laser that is applied as the light source of Blu-ray disc equipment. In the near future, it is highly likely that they will be introduced into white LEDs used for lighting and LCD backlight, power transistors to be used for power converters, and also into power semiconductors such as power diodes, leading to the rapid growth of the green device market involving GaN, SiC and diamond. These single-crystal substrates are expected to serve as a trigger to realize a low-carbon and low-energy society, complying with the projected cutbacks of power and CO 2 emission by 70 billion kWh and 40 million tons per year, respectively. This is why they are referred to as "green devices". In this paper, we will discuss the recent approaches that are in progress to develop new devices, taking GaN substrates as an example. Furthermore, we will review current problems and future perspectives for the most critical issue of realizing large substrates, as well as for the crystal growth method and manufacturing process that affect crystal quality.

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Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals

Cited by 133 publications

References 25 publications

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Optical and structural studies of homoepitaxially grown m-plane GaN

Current Status and Future Prospects of GaN Substrates for Green Devices

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