The Al 2 O 3 and AlN materials are often used as electrical insulators (electronic substrates) also the case of pressure sensors where the aluminum nitride (AlN) is selected as the piezoelectric layer and the alumina (Al 2 O 3 ) as a solid substrate insulating. This study aims to investigate the mobility of dislocations near the heterophase interface of bimaterials based alumina (Al 2 O 3 ) under the effect of the image force, without the effect of temperature, deformation and external stress These dislocations having a Burgers vector b = 1/3 [112 � 0] , they are located in Al 2 O 3 . The interface is defined by its plane parallel to the dislocation line and disorientation varies between 0 and 180° around the axis [101 � 0]. Usually, the image force calculated in the context of the anisotropic linear elasticity using Barnett and Lothe theory with Stroh formalism, Fi = ∆E / d, where ∆E is the elastic interaction energy. The results show that dislocation motion under the image force effect depends on the elastic and crystallographic properties of the materials constituting the bicrystals and even disorientation of the interface which has an effect on the intensity of the elastic interaction energy. The dislocations are repelled to the interface if the difference in shear modulus between the two materials is positive (∆µ= µ 2 −µ 1 >0), they are attracted to the interface in the opposite case (∆µ= µ 2 −µ 1 <0).