2001
DOI: 10.1016/s0921-5093(00)01696-8
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“Dislocation–interface” interaction — stress accommodation processes at interfaces

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Cited by 68 publications
(39 citation statements)
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“…This view is consistent with the fact that slip along general GBs is typically more complex than in CTBs and may involve dislocation climb or localized shear transformations, both of which are expected to be more difficult than dislocation glide. Moreover, in contrast to CTBs, stress concentrations formed by impinging dislocations may be accommodated more easily by the more disordered atomic structure of general GBs, averting crack initiation 47,48 .…”
Section: Discussionmentioning
confidence: 99%
“…This view is consistent with the fact that slip along general GBs is typically more complex than in CTBs and may involve dislocation climb or localized shear transformations, both of which are expected to be more difficult than dislocation glide. Moreover, in contrast to CTBs, stress concentrations formed by impinging dislocations may be accommodated more easily by the more disordered atomic structure of general GBs, averting crack initiation 47,48 .…”
Section: Discussionmentioning
confidence: 99%
“…Priester and al. [5] have dealt with the case of CFC structural materials and interactions between the matrix dislocations and grain boundaries during plastic deformation [6]. Koning et al [7] and Dewald et al [8][9][10] have used simulations to better understand these interactions.…”
Section: Introductionmentioning
confidence: 99%
“…The long range intergranular stresses associated to these EGBDs have to be relieved in order that other lattice dislocations may enter the GB and that deformation may go on. [2,3] Relaxation may occur by two types of processes: stress transmission in the neighboring crystals or EGBD incorporation in the GB structure. [1][2][3] Incorporation may imply the EGBD decomposition into discrete products or the continuous spreading within the GB of the strain associated to the EGBD.…”
mentioning
confidence: 99%
“…[2,3] Relaxation may occur by two types of processes: stress transmission in the neighboring crystals or EGBD incorporation in the GB structure. [1][2][3] Incorporation may imply the EGBD decomposition into discrete products or the continuous spreading within the GB of the strain associated to the EGBD. [3] It has been proved that the operating mechanisms strongly differ according to the dislocation core structure [4] and to the GB atomic structure.…”
mentioning
confidence: 99%
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