1977
DOI: 10.1002/pssa.2210420104
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Dislocation motion and multiplication at the deformation of MgO single crystals in the high voltage electron microscope

Abstract: In‐situ‐deformation experiments are made in a high voltage electron microscope. In MgO single crystals the processes governing the dislocation mobility are the overcoming of local obstacles at the screw dislocations and the Peierls mechanism at edge dislocations. The dislocations multiply mainly from edge dislocation dipoles trailed behind moving screw dislocations.

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Cited by 49 publications
(16 citation statements)
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“…4(b)). Nevertheless, two screw dislocation arms tagging behind an edge dipole trail are easily annihilated, as evidenced in single crystal MgO during in situ tensile test 27 …”
Section: Discussionmentioning
confidence: 99%
“…4(b)). Nevertheless, two screw dislocation arms tagging behind an edge dipole trail are easily annihilated, as evidenced in single crystal MgO during in situ tensile test 27 …”
Section: Discussionmentioning
confidence: 99%
“…1/2h1 1 0i{1 1 0} dislocation glide involves the nucleation of kink-pairs, typical of the lattice friction regime. This specific process leads to a characteristic dislocation microstructure made of rate-controlling long screw dislocations [32,33] which are also observed in body-centered cubic (bcc) metals at low temperature [34,35]. Above a transition temperature ($600 K for 1/2h1 1 0i{1 1 0} slip systems and 1500 K for 1/2h1 1 0i{1 0 0}), lattice friction is overcome and plastic strain is accommodated by curved dislocations [36,37], ruled by the strength of dislocationdislocation "forest" interactions [38,39].…”
Section: Introductionmentioning
confidence: 99%
“…For 1 ⁄2<110>{110}, T a ranges from 600 K to 800 K depending on the experimental dataset. CRSS vary less rapidly for 1 ⁄2<110>{100} slip systems and T a > 1300 K. Dislocation microstructures developed during single crystal compression tests were characterized using in situ TEM [24,25]. At room temperature, straight and long screw dislocations are observed in both the {110} and the {100} slip planes [24,26].…”
Section: Temperature-dependent Dislocation Microstructuresmentioning
confidence: 99%
“…In the early 1970s, the group of Messerschmidt (Halle, Germany) did an impressive work quantifying the interaction between dislocations and point defects, especially to interpret observations made in the High-Voltage Electron Microscope (HVEM) [12,24,[35][36][37][38][39][40][41][42]. Among others, a model for point obstacle crossing activation energy is proposed [37] as well as a comparison between TEM observations and calculation of point defect distance distribution [43].…”
Section: On the Role Of Impurities And Heat Treatments On Crss And DImentioning
confidence: 99%
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