Dislocation nucleation triggered by thermal stress during Ge/Si wafer bonding process at low annealing temperature

Single‐Crystalline Ge1−xSnx/Si p–n Heterojunction Photodiodes with Sn Compositions up to 10%

“…[8,9] In addition, it is difficult to form a direct GeSn/Si heterojunction qualified for working devices because of the defective Ge buffer layer.Another conventional approach to form the direct heterojunctions consisting of dissimilar materials is a low temperature plasma activated wafer bonding. [10][11][12][13] This approach can form various heterojunctions because plasma treatment makes the surface highly hydrophilic and reactive. For example, Wang et al demonstrated the development of the direct heterojunctions between Ge and Si using ultrathin amorphous GeSn films as interlayers.…”