Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates

Chen, Hou Guang; Ko, Tsung-Shine; Ling, Shih Chun; Lu, Tien−Chang; Kuo, Hao Chung; Wang, Shing Chung; Wu, Yue; Chang, Li

doi:10.1063/1.2754643

Cited by 34 publications

(20 citation statements)

References 10 publications

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“…The growth of semi-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN was first demonstrated by Chen et al [46] who reported the fabrication of such grooved patterns on r-plane sapphire using a chemical wet-etching process. A SiO 2 mask, with 6 μm window regions and 1 μm mask regions, orientated along the [11][12][13][14][15][16][17][18][19][20] direction was deposited on r-plane sapphire using a standard photolithography technique.…”

Section: Selective Growth On Patterned Substratesmentioning

confidence: 99%

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Wang

2016

Semicond. Sci. Technol.

110

118

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The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

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Section: Selective Growth On Patterned Substratesmentioning

confidence: 99%

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Wang

2016

Semicond. Sci. Technol.

110

118

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“…To improve the performance of GaN-based devices, there are several methods achieved in improving the epitaxial layer quality, including pendeo-epitaxy, nucleation layer growth, and epitaxial lateral overgrowth [1]. The epitaxy of GaN on patterned sapphire substrates (PSSs) has also been proved to effectively reduce the threading dislocation density [2]. It is well known that the epitaxial GaN layer grown on PSS always has a better quality than that grown on conventional sapphire substrate (CSS) characterized by the photoluminescence (PL), X-ray diffraction pattern, and lightemitting diode performance [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

DLTS Analyses of GaN p-i-n Diodes Grown on Conventional and Patterned Sapphire Substrates

Wang

Liao

Chang

et al. 2013

IEEE Electron Device Lett.

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In this letter, we report the electrical characteristics of current-voltage, capacitance-voltage, and deep-level transient spectroscopy on the GaN p-i-n diodes with a 5-µm i-layer, which were grown on the conventional sapphire substrates (CSSs) and patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. The GaN p-i-n diodes with PSS exhibit a wider diffusion region in the forward bias, two traps at 0.43 and 0.87 eV above the valence band, and a low trap concentration of ∼5 × 10 16 cm −3 , as compared with the GaN p-i-n diodes with CSS. These results show that the GaN p-i-n diodes grown on PSS have a better quality of epitaxial layers than those grown on CSS.Index Terms-Conventional sapphire substrates, deep-level transient spectroscopy (DLTS), GaN, patterned sapphire substrate (PSS), p-i-n diode.

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“…3,4 This orientation is usually achieved by heteroepitaxially growing GaN on planar ͑1100͒ m-sapphire. 9 More recently, coalesced ͑1122͒ GaN films were achieved from r-sapphire patterned by plasma reactive ion etching. The resulting layers present however high densities of basal plane stacking faults ͑BSFs͒ and partial dislocations ͑PDs͒ terminating the BSFs, which are not commonly observed in c-plane GaN.…”

mentioning

confidence: 99%

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

Mierry¹,

Kriouche²,

Némoz³

et al. 2010

Applied Physics Letters

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Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates

Cited by 34 publications

References 10 publications

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

DLTS Analyses of GaN p-i-n Diodes Grown on Conventional and Patterned Sapphire Substrates

Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching

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