Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth

Zaima, Kotaro; Hashimoto, Ryota; Ezaki, Mizunori; Nishioka, M.; Arakawa, Yasuhiko

doi:10.1016/j.jcrysgro.2008.07.040

Cited by 10 publications

(6 citation statements)

References 8 publications

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“…Antimonide based compound semiconductors have many attractive applications in infrared lasers, detectors, and high-speed electronic devices due to its wide range of electronic band gaps, unique band-structure alignments, and high electron mobility. [1][2][3][4][5][6][7][8] Moreover, as a member of the 6.1 Å family, GaSb is also an important substrate material, for example, for the growth of type II superlattice infrared lasers and detectors. [9][10][11] Although significant progress have been made in the fabrication technology of GaSb substrates in the past few years, the quality of currently commercially available GaSb substrates still cannot meet the technical requirements for the "epi-ready" substrates, due to the non-optimized oxide layer as well as the large amount of macroscopic defects on the surface.…”

Section: Introductionmentioning

confidence: 99%

A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD

Tong

Tobing

et al. 2017

Journal of Elec Materi

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We present a simple thermal treatment with antimony source for the MOCVD growth of thin GaSb films on GaAs (111) substrates for the first time. The properties of the as-grown GaSb films are systematically analyzed by scanning electron microscopy, atomic force microscopy, X-ray diffraction, photo-luminescence (PL) and Hall measurement. It is found that the as-grown GaSb films by the proposed method can be as thin as 35 nm and have a very smooth surface with the root mean square roughness as small as 0.777 nm. Meanwhile, the grown GaSb films also have high crystalline quality, of which the FWHM of the rocking-curve is as small as 218 arcsec. Moreover, the good optical quality of the GaSb films has been demonstrated by the low-temperature PL. This work provides a simple and feasible buffer-free strategy for the growth of high quality GaSb films directly on GaAs substrates and the strategy may also be applicable to the growth on other substrates and hetero-growth of other materials.

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Section: Introductionmentioning

confidence: 99%

A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD

Tong

Tobing

et al. 2017

Journal of Elec Materi

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“…For InP ELO on InP no SFs were observed in the overgrown layers, while in the heteroepitaxial case on a Si(001) substrate, rare occurrence of SFs was noticed and is suggested to stem from residual stress of the Si-InP heterojunction area. Similarly, for GaSb ELO on (001) substrates no SFs for homoepitaxy as well as for heteroepitaxy on GaAs substrates were observed . In TASE, SF-free growth of GaSb and InP was shown. , These observations indicate that impurities located on the SiO 2 surface are less critical as compared to impurities on semiconducting growth substrates.…”

Section: Discussionmentioning

confidence: 89%

“…Similarly, for GaSb ELO on (001) substrates no SFs for homoepitaxy as well as for heteroepitaxy on GaAs substrates were observed. 21 In TASE, SF-free growth of GaSb and InP was shown. 8,13 These observations indicate that impurities located on the SiO 2 surface are less critical as compared to impurities on semiconducting growth substrates.…”

Section: Discussionmentioning

confidence: 94%

Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

Knoedler

Bologna

Schmid

et al. 2017

Crystal Growth & Design

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We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal–organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

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“…The photoluminescence (PL) emission around 1.55 µm wavelength was observed for GaSb/ AlGaSb MQW structure at room temperature. Low dislocation density, high-quality GaSb epitaxial films on GaAs (001) substrates stripe-patterned with SiO 2 is also prepared by MOCVD with low temperature epitaxial lateral overgrowth (ELO) method [11].…”

Section: The Physical Properties and Preparation Technology Of Abcs Bmentioning

confidence: 99%

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

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Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth

Cited by 10 publications

References 8 publications

A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD

A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD

Observation of Twin-free GaAs Nanowire Growth Using Template-Assisted Selective Epitaxy

Progress in Antimonide Based III-V Compound Semiconductors and Devices

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