Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

Hsu, Chiou-Ting; Chen, Yung-Feng; Su, Yan–Kuin

doi:10.1186/1556-276x-7-642

Cited by 8 publications

(5 citation statements)

References 33 publications

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“…The advantages of SAG include control over shapes, dimensions, positions, and faceting of the final structures [10,11]. Moreover, improved crystal quality of SAG materials as compared to their planar counterparts has been demonstrated [8,12]. * daria.beznasiuk@nbi.ku.dk…”

Section: Introductionmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In x Ga 1−x As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm 2 V −1 s −1 . This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

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Section: Introductionmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

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“…GaAs nanomembranes have been used as a platform to form nanowire networks due to their exceptional quality and the ability to form Y-shaped structures in situ . However, vertical GaAs nanomembranes can be formed only along the ⟨112̅⟩ orientations and typically evolve into a triangular shape, which may limit their controllability and usefulness. ,,− In addition, V-shaped InAs nanomembranes, InAs nanofins, and GaN nanosheets/nanowalls − have also been reported. Unfortunately, a systematic investigation of the manipulation of the desired shapes and understanding the transformation mechanism of nanostructures is still lacking.…”

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confidence: 99%

Shape Engineering of InP Nanostructures by Selective Area Epitaxy

et al. 2019

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Greater demand for III−V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.

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“…Conesa-Boj et al obtained V-shaped nanomembranes by molecular beam epitaxy using nanoscale apertures in a SiO x mask. More recently, trench structures in a SiO x mask have been used to grow long horizontally oriented InAs, − GaN, GaAs, ,, and InSb nanowires, along with more exotic materials . These structures remain on their growth substrate for use as photonic structures, ,− electronic wires, − , or as templates for further growth, for example, InAs nanowires atop GaAs nanomembranes …”

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confidence: 99%

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

et al. 2019

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We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and fourterminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density 2.5 − 5 × 10 17 cm −3 , corresponding to an approximate surface accumulation layer density 3 − 6× 10 12 cm −2 that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as 1200 cm 2 /Vs, field-effect mobilities as high as 4400 cm 2 /Vs and clear quantum interference structure at temperatures as high as 20 K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates and possibly other functional elements, e.g., patterned superconductor contacts, that may make them attractive options for future quantum information applications.Quantum devices were underpinned for several decades by the interfacial two-dimensional (2D) electron gas found in III-V semiconductor heterostructures. 1 A top-down approach to these systems is costly, with heterostructure complexity limited by interfacial strain issues.Bottom-up approaches have thus generated massive interest with a heavy focus on onedimensional (1D) nanostructures, i.e., nanowires, where small interfaces enable greater heterostructure versatility, including the ability to integrate III-Vs on low-cost Si substrates. [2][3][4] Researcher ingenuity has meant clever new devices still arise from the nanowire geometry even after two decades. That said, we suspect we are not alone in wishing for extra spatial dimensions to work with. An attractive idea would be to take the hexagonal nanowire cross-section and stretch it to obtain a 2D 'nanofin' such that two side-facets have much larger area. These could be transferred to a separate substrate to make devices featuring, e.g., multiple contacts and gates by conventional nanofabrication methods. This concept is impossible with vapor-liquid-solid approaches. 5,6 Here we demonstrate it is possible using selective-area epitaxy, 7,8 giving 2D InAs nanofins with precise size control, and opening a path to more interesting nanostructure shapes via appropriate mask design. 9Our 2D nanofins offer some interesting potential for nanoelectronics. Firstly, they offer

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Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

Cited by 8 publications

References 33 publications

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Shape Engineering of InP Nanostructures by Selective Area Epitaxy

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

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