Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction

Abstract

An ultrathin silicon layer (16 nm) bonded onto a silicon wafer is studied by grazing incidence x-ray diffraction. We measure satellite peaks around the {220} reflections coming from two periodic dislocation networks localized at the bonding interface. These lateral superlattice peaks are explained with a simple continuum model, and their positions give information about the tilt and twist misalignment of the two crystals, as well as the nature and interactions between the dislocation arrays. The square symmetry of dissociated screw dislocations (twist) and the average alignment of the mixed dislocations (tilt) are observed. The analysis of the satellite truncation rods shows that the strain field is strong enough to affect the surface, and that the dissociation of screw dislocations has to be taken into account

Formation of Au nanoparticles on Si bicrystals

“…The analysis of the satellite truncation rods shows that the strain field is strong enough to affect the surface. 17 The discrepancy found between the theoretical prediction and experimental results shall be beneficial for further theoretical and practical developments.…”

Strained heteroepitaxy on nanomesas: a way toward perfect lateral organization of quantum dots

“…the bonded layer thickness) rules the magnitude of the surface stress. It appeared rapidly that, for a nanoscale pattern, the bonded layer thickness was very small [7,8], so that a thinning process cannot be avoided [9]. However, any etching process usually generates a corrugation on surface.…”

Germanium growth on nanopatterned surface studied by STM

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