2021
DOI: 10.1016/j.ultramic.2021.113258
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Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced

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Cited by 4 publications
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“…There have been very few reports of AlGaN/GaN HEMTs with sheet resistivity of near or less than 250 Ω/ [6,8] with a single AlGaN barrier, with most of them on SiC substrates. It is challenging to achieve low sheet resistivity in AlGaN/GaN HEMT structures deposited on sapphire substrates due to the high density of defects and dislocations generated due to lattice mismatch (16%) between GaN and sapphire [9,10]. Also, it is well known that due to high optical phonon scattering and scattering due to polarization-induced charges at the interface, it is very difficult to achieve sheet resistivity below 250 Ω/ [11].…”
Section: Introductionmentioning
confidence: 99%
“…There have been very few reports of AlGaN/GaN HEMTs with sheet resistivity of near or less than 250 Ω/ [6,8] with a single AlGaN barrier, with most of them on SiC substrates. It is challenging to achieve low sheet resistivity in AlGaN/GaN HEMT structures deposited on sapphire substrates due to the high density of defects and dislocations generated due to lattice mismatch (16%) between GaN and sapphire [9,10]. Also, it is well known that due to high optical phonon scattering and scattering due to polarization-induced charges at the interface, it is very difficult to achieve sheet resistivity below 250 Ω/ [11].…”
Section: Introductionmentioning
confidence: 99%