2018
DOI: 10.1063/1.5049900
|View full text |Cite
|
Sign up to set email alerts
|

Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n + InAs/p + GaSb nanowire tunneling devices

Abstract: Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalizedporphyrin based organic molecules A spatially smoothed device model for meso-structured perovskite solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 26 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?