1992
DOI: 10.1016/b978-0-444-88773-3.50013-3
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Dislocations Emerging at Planar Boundaries

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Cited by 20 publications
(7 citation statements)
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“…Indeed, there is usually a thin layer with different mechanical properties close to the surface due to surface preparations, such as the FIB polishing which can create a damaged layer (Kheradmand, 2012;Idrissi et al, 2016;Chen, 2020). In order to study the interactions between dislocations, GBs and surfaces, the elastic fields due to one single dislocation in anisotropic bi-materials and half-spaces have been largely investigated for perfect GB and half-space surface models with two-dimensional elasticity theory (Tucker and Crocker, 1968;Gemperlova and Saxl, 1968;Suo, 1990;Ting, 1992;Belov, 1992;Chu and Pan, 2014;Zhang et al, 2016;Chen et al, 2020;Chen, 2020).…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, there is usually a thin layer with different mechanical properties close to the surface due to surface preparations, such as the FIB polishing which can create a damaged layer (Kheradmand, 2012;Idrissi et al, 2016;Chen, 2020). In order to study the interactions between dislocations, GBs and surfaces, the elastic fields due to one single dislocation in anisotropic bi-materials and half-spaces have been largely investigated for perfect GB and half-space surface models with two-dimensional elasticity theory (Tucker and Crocker, 1968;Gemperlova and Saxl, 1968;Suo, 1990;Ting, 1992;Belov, 1992;Chu and Pan, 2014;Zhang et al, 2016;Chen et al, 2020;Chen, 2020).…”
Section: Introductionmentioning
confidence: 99%
“…Other TDs in GaN are sometimes directed along the c axis, while other TDs have lines inclined noticeably with respect to c. For the screw case ( = 0) and b = c, the dislocation density b( ) is given by the expression (14). Taking the constants indicated in [16], Figure 2 illustrates the sinusoidal shape of the two nonzero components of the dislocation density b( ), that is, 1 ( ) and 2 ( ).…”
Section: Application To Ganmentioning
confidence: 99%
“…The displacement field regarding a mixed dislocation with //c( = 0) was already expressed for a plate-like hexagonal crystal in [14] but unfortunately this author did not consider a semi-infinite crystal. In the present work, the solution is found in searching for the limit of the displacement field u rel around the upper emerging point when the plate thickness tends to infinity.…”
Section: The Stress Potential Approachmentioning
confidence: 99%
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