Disorder-driven electron delocalization in strange metals: The case of tetragonal FeTe

Interplay of electric field and disorder in Dirac liquid silicene

“…Let us turn our attention to the effect of sitediagonal disorder in the weakly correlated CDW elec- tronic state of silicene. Here, we treat the MO problem of silicene within the DFT + DMFT(MO-IPT + CPA) approach [59], which allows for an exact treatment of binary disorder within DMFT [24]. This treatment has been already used to describe electronic phase transitions of doped Mott insulators [60,61], which were found to be in good accordance with experimental observations.…”

“…The combined U +δ (Mott-Anderson) problem, i.e., the situation where MO Coulomb repulsion and disorderinduced electronic reconstruction simultaneously affect the one-particle response, is treated within GGA + DMFT by a proper combination of the interaction selfenergy with the CPA one [24]. The detailed formulation of the Mott-Anderson problem has already been developed and used in the context of DFT+DMFT for real materials [59][60][61], so we do not repeat the equations here. Figure 5 shows the changes in the Dirac liquid electronic structure of silicene for fixed Δ and x = 0.25.…”

Electronic and valleytronic properties of crystalline boron-arsenide tuned by strain and disorder

“…52,53 Generally speaking, our scheme is the uncorrelated limit of that applied to the disordered Hubbard model, 52 where the effect of site-diagonal disorder is modeled by incorporating an Anderson-like disorder term (ref. 54) in the bare one-electron Hamiltonian of BAs bulk crystal, which reads . Here, a = x , y , z labels the diagonalized p-bands, ε a ( k ) is the one-electron band dispersion, which encodes details of the one-electron (GGA) band structure, μ is the chemical potential, and ε (0) a are on-site orbital energies of pristine and strained BAs, whose bare values are read off from the GGA spectral functions.…”