2014
DOI: 10.1002/pssa.201300749
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Disorder effects in giant magnetocaloric materials

Abstract: In striving for mass production of magnetocaloric materials for refrigeration applications, one has to face the fact that these will not be laboratory‐grade materials, and will necessarily present (at the very least) composition gradients due to lower quality precursors. One can expect some probable consequences from this, namely that the maximum value of magnetic entropy change (ΔSM) will decrease compared to a pure material, but also some broadening of the ΔSM(T) curves should occur, as observed in some elem… Show more

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Cited by 38 publications
(23 citation statements)
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“…The magnetic moment, T C and dT C /dV can be employed in a meanfield model approach such as the Bean-Rodbell model [17], [18]. This simple model allows the quick evaluation of the predicted order of the transition (second or first), and the contribution of the magnetovolume coupling to the total observed magnetic entropy change.…”
Section: Resultsmentioning
confidence: 99%
“…The magnetic moment, T C and dT C /dV can be employed in a meanfield model approach such as the Bean-Rodbell model [17], [18]. This simple model allows the quick evaluation of the predicted order of the transition (second or first), and the contribution of the magnetovolume coupling to the total observed magnetic entropy change.…”
Section: Resultsmentioning
confidence: 99%
“…As shown previously [24,25], systems with second-and first-order phase transitions have been adequately interpreted using this model, which describes in particular the magnetovolume interactions [26]. The model assumes a linear dependence (with a proportionality factor β) of the Curie temperature (T C ) of the system on a relative volume (v) change:…”
Section: Bean-rodbell Model and Magnetovolume Couplingmentioning
confidence: 94%
“…In the literature, this peculiar M(H) shape has been generally associated with disorder that might be caused by microstrain, structural defects, chemical disorder, etc. 21,60 Moreover, the simultaneous observation of a Tc increase together with the shrinkage of the unit cell are hallmarks of stress and strain presence for the Gd 5 (Si,Ge) 4 materials. 18,61,62 Typically, Gd 5 (Si x ,Ge 1Àx ) 4 with x $ 0.3/0.4 compounds present a T C pressure dependence of @T C /@P $ 1.2-1.5 K/kilobars.…”
mentioning
confidence: 99%