“…This regime succeeds the very strong increase of the mobility with rising field, 15,16 and does not precede it at lower fields as claimed on the basis of the drift equations. 3,4,5,6,7,8,9,10 The decreasing conductivity with increasing electric field at high field strengths has been observed experimentally for hopping transport in lightly doped and weakly compensated crystalline silicon. 17,18,19 The hopping transport mode in such systems at low electric fields had been described theoretically in all detail, 20 which made these systems particularly attractive for studying the new non-Ohmic effects.…”