Disorder-induced dephasing in semiconductors

Weiser, Sidney; Meier, Torsten; Möbius, J.; Euteneuer, A.; Mayer, Ernest; Stolz, W.; Hofmann, Martin R.; Rühle, W. W.; Thomas, P.; Koch, S. W.

doi:10.1103/physrevb.61.13088

Cited by 42 publications

(41 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…which differ from the conventional optical Bloch equations for a noninteracting tight-binding model 10,15,16 by the terms containing the position R i of the sites.…”

Section: Equations Of Motionmentioning

confidence: 91%

“…The optically excited inter-band transitions in a semiconductor cannot be considered as an ensemble of independent two-level absorbers due to the strong interaction of the electron-hole pairs. Photon echoes therefore may show a decay as a function of the delay time due to the Coulomb interactions, due to disorder, and due to combined interaction-disorder effects 6,8,9,10 . In Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Since the many-particle Coulomb interaction has been ignored in these calculations, one might suspect that Coulomb scattering leads to sufficiently rapid dephasing such that the new dynamics is no longer observable. The consideration of the Coulomb interaction for the situation at hand requires to calculate the response at least up to 5th-order in the external light field and to treat the interaction consistently with all the relevant correlations (for a 3rd-order treatment in a disordered semiconductor model see, e.g., 10,15,16 ). Even for a one-dimensional system this task is beyond present computer capacity.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optically induced coherent intraband dynamics in disordered semiconductors

et al. 2002

Self Cite

View full text Add to dashboard Cite

On the basis of a tight-binding model for a strongly disordered semiconductor with correlated conduction-and valence band disorder a new coherent dynamical intra-band effect is analyzed. For systems that are excited by two, specially designed ultrashort light-pulse sequences delayed by τ relatively to each other echo-like phenomena are predicted to occur. In addition to the inter-band photon echo which shows up at exactly t = 2τ relative to the first pulse, the system responds with two spontaneous intra-band current pulses preceding and following the appearance of the photon echo. The temporal splitting depends on the electron-hole mass ratio. Calculating the population relaxation rate due to Coulomb scattering, it is concluded that the predicted new dynamical effect should be experimentally observable in an interacting and strongly disordered system, such as the Quantum-Coulomb-Glass.

show abstract

“…which differ from the conventional optical Bloch equations for a noninteracting tight-binding model 10,15,16 by the terms containing the position R i of the sites.…”

Section: Equations Of Motionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optically induced coherent intraband dynamics in disordered semiconductors

et al. 2002

Self Cite

View full text Add to dashboard Cite

show abstract

“…Selection rules appropriate for dipole transitions in III-V semiconductors are used. Disorder can also be modeled as fluctuations of X from site to site (37). …”

Section: Methodsmentioning

confidence: 99%

Polarization-dependent optical 2D Fourier transform spectroscopy of semiconductors

Zhang

Кузнецова

Meier

et al. 2007

Proc. Natl. Acad. Sci. U.S.A.

118

113

View full text Add to dashboard Cite

Optical 2D Fourier transform spectroscopy (2DFTS) provides insight into the many-body interactions in direct gap semiconductors by separating the contributions to the coherent nonlinear optical response. We demonstrate these features of optical 2DFTS by studying the heavy-hole and light-hole excitonic resonances in a gallium arsenide quantum well at low temperature. Varying the polarization of the incident beams exploits selection rules to achieve further separation. Calculations using a full many-body theory agree well with experimental results and unambiguously demonstrate the dominance of many-body physics.excitons ͉ many-body effects ͉ ultrafast O ptical excitation of a direct gap semiconductor, such as gallium arsenide (GaAs), produces electron-hole pairs. The Coulomb attraction between the electron and hole can result in a bound state, known as an exciton, with a hydrogenic wavefunction for the relative coordinate. Excitons have a large oscillator strength because of the proximity of the electron and hole and thus can dominate the absorption spectrum close to the fundamental band gap. In GaAs heterostructures, the exciton binding energy is of order 10 meV; thus, excitonic resonances appear only at low temperatures. Excitons and unbound electron-hole pairs exhibit dynamics on a femtosecond-to-picosecond time scale. These timescales, combined with the strong interaction with light, make ultrafast spectroscopy an ideal tool for studying carrier dynamics in semiconductors.Over the last two decades, excitonic resonances in semiconductors have been studied extensively by using ultrafast spectroscopy, primarily transient four-wave-mixing (TFWM) (1, 2). The measurements clearly showed signatures of many-body effects. The first and most prominent was a signal for the ''wrong'' time delay in a two-pulse TFWM experiment. Theoretically, such signals could arise from several effects including local fields (3, 4), biexcitons (5), excitation-induced dephasing (6, 7), or excitation-induced shift (8). Time resolving the signal also provided evidence for many-body contributions (9, 10), although it did not resolve the ambiguity regarding the underlying phenomena.Recent results using optical 2D Fourier transform spectroscopy (2DFTS) to study the exciton resonances have shown that much more information is obtained, promising a more stringent test of the theory (11). 2DFTS traces its roots to NMR (12). Recently, there has been significant progress in translating multidimensional NMR techniques into the infrared and optical domains for the study of vibrations (13) and electronic excitations (14-16) in molecules. Although the usefulness of adding a second dimension was recognized in TWFM studies of semiconductors (17-20), only the intensity of the emitted signal, not the phase-resolved electric field, was measured. The transient absorption experiments clearly show that detecting only the real part of the emitted field is advantageous (21, 22), but the effects of inhomogeneous broadening cannot be removed. 2DFTS combines the best...

show abstract

“…The different dephasing times for the signals at the exciton resonance for co-and cross-linearly polarized pulse can be attributed to the dissimilar influence of exciton-exciton interactions, i. e. excitation-induced dephasing, for the two polarization configurations in combination with a residual inhomogeneous broadening of the resonances [4,6]. A further explanation could be the influence of disorder-induced dephasing for cross-linearly polarized excitation pulses due to a residual inhomogeneous broadening of the resonances [7]. The extracted homogeneous linewidths of the EBT and the exciton states reveal a comparable temperature dependence, with the EBT dephasing slightly faster.…”

Section: Resultsmentioning

confidence: 91%

Dephasing of excitonic and biexcitonic polarization in a ZnSe single‐quantum well

Breunig

Voss

Kudyk

et al. 2004

phys. stat. sol. (c)

View full text Add to dashboard Cite

PACS 78.47.+p, 78.55.Et The decay of excitonic and biexcitonic polarization in a ZnSe single-quantum well is studied in transient, time-integrated four-wave-mixing measurements. The acoustic-and optical-phonon-scattering coefficients are obtained from the temperature dependence of the decay of the four-wave-mixing signal at the exciton and exciton-to-biexciton transition. The temperature dependence of the scattering coefficients is found to be comparable for both transitions.1 Introduction The study of the coherent dynamics of optical excitations in semiconductors offers the possibility to investigate fundamental quantum mechanical interactions. In particular the coherent dynamics of excitons in quantum structures has attracted a lot of interest in the last years. In these structures the enhancement of the Coulomb interaction due to the lowering of the dimensionality leads to very distinct exciton as well as higher Coulomb correlation effects. These correlation effects influence the optical response in II-VI materials even stronger than in conventional III-V semiconductors. The four-wave-mixing (FWM) spectroscopy provides a powerful method to investigate the coherent dynamics of these states as well as scattering processes. However, the scattering processes of biexcitons have not been addressed as detailed as the dephasing of excitonic states [1], although the coherent dynamics of the excitonic and biexcitonic states have been extensively studied. The FWM signal can be strongly influenced by inhomogeneous broadening of the involved resonances making the analysis of the exciton and biexciton scattering processes rather complicated. In this work, we study the temperature dependence of the scattering processes of excitons and biexcitons in a sample with homogeneously broadened resonances.

show abstract

Disorder-induced dephasing in semiconductors

Cited by 42 publications

References 46 publications

Optically induced coherent intraband dynamics in disordered semiconductors

Optically induced coherent intraband dynamics in disordered semiconductors

Polarization-dependent optical 2D Fourier transform spectroscopy of semiconductors

Dephasing of excitonic and biexcitonic polarization in a ZnSe single‐quantum well

Contact Info

Product

Resources

About