Disorder-induced Raman scattering in MgxZn1−xTe mixed crystals

Yoon, Chang-Sun; Kim, Byung-Ho; Cha, Deokjoon; Kim, Young-Sil; Chung, Sang-Jo; Ko, Jeung-Gon; Kim, Chang‐Dae; Park, Hong-Lee; Kim, Wha‐Tek

doi:10.1016/s0038-1098(98)00124-0

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…With respect to bulk growth of Zn 1 À x Mg x Te crystals, several investigations have so far been carried out mainly using the Bridgman technique [1,2,[4][5][6][7][8][9], which is simple and leads to low cost. However, there are only a few works on phosphorus (P)-doped Zn 1 À x Mg x Te bulk crystals [4,6] except for our previous studies [2,8,9].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Nishio

Hiwatashi

Saito

et al. 2011

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Nishio

Hiwatashi

Saito

et al. 2011

Journal of Crystal Growth

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“…Raman scattering measures the vibrational states of a crystal lattice that are sensitive to crystal order or disorder. 11 According to van de Walle et al, 12 in binary alloys the phonon density of states (DOS) changes with the extent of disorder and accompanying volume change. This is because the strength of the atomic bonds is weaker in the disordered structure.…”

mentioning

confidence: 99%

“…More direct observation supporting the possibility that HgTe forms in a disordered structure is obtained from Raman scattering characterization. Raman scattering measures the vibrational states of a crystal lattice that are sensitive to crystal order or disorder . According to van de Walle et al., in binary alloys the phonon density of states (DOS) changes with the extent of disorder and accompanying volume change.…”

mentioning

confidence: 99%

Formation of HgTe Nanodisks Embedded in PbTe Matrix by Precipitation Phenomena

Lee

Kim

2003

Nano Lett.

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We report findings related to the HgTe nanodots fabricated from the precipitation phenomenon in the HgTe−PbTe quasi-binary system. With homogeneous nucleation and growth of HgTe phase, a well defined nanostructure is obtained, where the nanodots are three-dimensionally dispersed within the PbTe matrix. The nanodots prefer to take disk shape to relax a strong strain energy that resulted from the formation of disordered HgTe phase. With this facile and effective technique, the nanodots with various morphologies can be realized within any form of matrix, such as powder, bulk, or thin film, providing a new way to tailor the properties of the nanodots.

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Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method

Saito¹,

Kinoshita²,

Tanaka³

et al. 2006

Phys. Status Solidi (c)

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Phosphorus-doped Zn 1-x Mg x Te (0 ≤ x ≤ 0.31) bulk crystals with zinc-blende structure were grown by vertical Bridgman technique. Single crystalline wafers cut from the ingots have been systematically characterized by energy dispersive X-ray analysis, photoluminescence, optical reflection and transmission, and Hall measurements together with the evaluation of electroless Pd electrode to Zn 0.9 Mg 0.1 Te. The linear increase in the lattice constant and the band-gap energy with x was confirmed. In photoluminescence spectra at 4.2 K, two distinct band-edge luminescence peaks were observed, whereas there are no deep emission bands. These peaks were assigned to be bound exciton emission due to neutral P acceptor and a P acceptor related free-to-bound transition emission. Electroless Pd electrode shows the specific contact resistance lower than 5×10

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Disorder-induced Raman scattering in MgxZn1−xTe mixed crystals

Cited by 6 publications

References 11 publications

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Temperature dependence of electrical properties for P-doped ZnMgTe bulk crystals of high quality grown by Bridgman method

Formation of HgTe Nanodisks Embedded in PbTe Matrix by Precipitation Phenomena

Phosphorus‐doped ZnMgTe bulk crystals grown by Vertical Bridgman Method

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