Disordering of Quantum Structures for Optoelectronic Device Integration

Fu, Lan; Mokkapati, Sudha; Barik, S.; Buda, M.; Tan, H. H.; Jagadish, Chennupati

doi:10.1016/b978-0-44-453153-7.00004-3

Comprehensive Semiconductor Science and Technology 2011

DOI: 10.1016/b978-0-44-453153-7.00004-3

|View full text |Cite

Disordering of Quantum Structures for Optoelectronic Device Integration

Lan Fu

Sudha Mokkapati

S. Barik³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 151 publications

(139 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Calculating electron transport properties scattered by inhomogeneous distributed Aluminium Galium Arsenide material in cylindrical nanowire

Alqarni

Jammal

Aldawsari

et al. 2023

Int. J. Mod. Phys. B

View full text Add to dashboard Cite

In this paper, the [Formula: see text]-matrix method and Wigner–Eisenbud functions (WEFs) are used to compute the transport properties of an electron scattered in a cylindrical nanowire doped with Aluminium Galium Arsenide (AlGaAs) in the scattering region. In these calculations, a Gaussian potential was used to represent the AlGaAs dopants. The nanowire is considered a closed system. By assuming quantum transport, the electron flows in an elastic process from source to drain. An electron with energy [Formula: see text] coming from the source can either be reflected or transmitted to the drain. One-dimensional (1D) and two-dimensional (2D) nanowire calculations were performed. The transmission coefficients show an inverse relation with the depth of the Gaussian potential and depend on the incident energy of the electron.

show abstract

Calculating electron transport properties scattered by inhomogeneous distributed Aluminium Galium Arsenide material in cylindrical nanowire

Alqarni

Jammal

Aldawsari

et al. 2023

Int. J. Mod. Phys. B

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Disordering of Quantum Structures for Optoelectronic Device Integration

Cited by 1 publication

References 151 publications

Calculating electron transport properties scattered by inhomogeneous distributed Aluminium Galium Arsenide material in cylindrical nanowire

Calculating electron transport properties scattered by inhomogeneous distributed Aluminium Galium Arsenide material in cylindrical nanowire

Contact Info

Product

Resources

About