Dispersion of Phonon Surface Polaritons in ZnGeP2: Anisotropy and Temperature Impacts

Shportko, K.; Otto, A.; Venger, É. F.

doi:10.1186/s11671-016-1270-7

Cited by 3 publications

(2 citation statements)

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“…The dispersion of the SP ν s (k) in CdP 2 and Cd X Zn (1−X) P 2 has been calculated in the same manner as previously in [ 17 , 18 ] with respect to the sample orientation ( C || y ) and using as the input data the discussed above dielectric function of CdP 2 and Cd X Zn (1−X) P 2 within the spectral range of the ATR measurements. According to the Table 1 , in both CdP 2 and Cd X Zn (1−X) P 2 calculated dispersion curve ν s (k) of the SP exhibits 7 branches within studied range.…”

Section: Resultsmentioning

confidence: 99%

Spectroscopy of the Surface Polaritons in the CdXZn(1−X)P2 Solid Solutions

et al. 2017

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Here we report on the analysis of the effect of the doping of CdP2 single crystals by ZnP2 nanoclusters on the dispersion of the surface polaritons (SP). The ATR spectroscopic technique has been applied to excite the SP in the CdXZn(1−X)P2 system. Analysis of the obtained spectra has shown that the doping of CdP2 single crystals by ZnP2 nanoclusters result in the position and the width of the dispersion branches of the SP. This effect is more pronounced in the low frequency dispersion branches. These SP branches are originated from phonons which correspond to the motion of the cation sublattice.

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Section: Resultsmentioning

confidence: 99%

Spectroscopy of the Surface Polaritons in the CdXZn(1−X)P2 Solid Solutions

et al. 2017

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“…Here, the high-frequency dielectric constant for 4H-SiC (ε ∞ = 6.52) was taken from [29] and that for ZnGeP 2 (ε ∞ = 10.04) from [30].…”

Section: Terahertz Photoconductivity Measurementsmentioning

confidence: 99%

Electrical Relaxation and Transport Properties of ZnGeP2 and 4H-SiC Crystals Measured with Terahertz Spectroscopy

et al. 2023

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Terahertz photoconductivity and charge carrier recombination dynamics at two-photon (ZnGeP2) and three-photon (4H-SiC) excitation were studied. Thermally annealed, high-energy electron-irradiated and Sc-doped ZnGeP2 crystals were tested. The terahertz charge carrier mobilities were extracted from both the differential terahertz transmission at a specified photoexcitation condition and the Drude–Smith fitting of the photoconductivity spectra. The determined terahertz charge carrier mobility values are ~453 cm2/V·s for 4H-SiC and ~37 cm2/V·s for ZnGeP2 crystals. The charge carrier lifetimes and the contributions from various recombination mechanisms were determined at different injection levels using the model, which takes into account the influence of bulk and surface Shockley–Read–Hall (SRH) recombination, interband radiative transitions and interband and trap-assisted Auger recombination. It was found that ZnGeP2 possesses short charge carrier lifetimes (a~0.01 ps−1, b~6 × 10−19 cm3·ps−1 and c~7 × 10−40 cm6·ps−1) compared with 4H-SiC (a~0.001 ps−1, b~3 × 10−18 cm3·ps−1 and c~2 × 10−36 cm6·ps−1), i.e., τ~100 ps and τ~1 ns at the limit of relatively low injection, when the contribution from Auger and interband radiative recombination is small. The thermal annealing of as-grown ZnGeP2 crystals and the electron irradiation reduced the charge carrier lifetime, while their doping with 0.01 mass % of Sc increased the charger carrier lifetime and reduced mobility. It was found that the dark terahertz complex conductivity of the measured crystals is not fitted by the Drude–Smith model with reasonable parameters, while their terahertz photoconductivity can be fitted with acceptable accuracy.

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