Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor

Atayeva, S. U.; Mekhtiyeva, S. I.; Isayev, A. I.

doi:10.1134/s1063782615070040

Cited by 2 publications

(3 citation statements)

References 15 publications

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“…The PXRD peaks of AT show the formation of a rhombohedral phase (JCPDS file no. : 01-071-0393) 25,26 with space group (no:166) R3̅ m. Comparable XRD patterns of Sb 2 Te 3 have also been reported by Shi et al for nanoplates 42 and by Dong et al for other nanoforms. 43 Furthermore, the variation in position (2θ values of 0.25−0.5) of the peaks by addition of Sm and In verifies the substitution of dopants within the lattice of Sb 2 Te 3 .…”

Section: Powder X-ray Diffraction (Pxrd)supporting

confidence: 66%

“…The PXRD peaks of AT show the formation of a rhombohedral phase (JCPDS file no. : 01-071-0393) , with space group (no:166) R 3̅ m . Comparable XRD patterns of Sb 2 Te 3 have also been reported by Shi et al for nanoplates and by Dong et al for other nanoforms .…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, samarium as dopant also exhibits improved electronic, photocatalytic degradation under visible light and solar cell applications . In addition, Sm +3 -doped chalcogenides, including Se 95 Te 5 , As-Se-Te, and As-Se-S, have been prepared and studied for better thermal stability and ultra-fast phase-changing memory devices. Similarly, In as dopant has been well explored as a photocatalyst, and for photovoltaic, photoelectrochemical, and electrochemical properties, as well as for enhanced gas-sensing application. , Moreover, different In-incorporated chalcogenides like Se-Te-In, GeTe, and Cu-Cr-Se have been studied in detail for their superior thermoelectric and optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

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Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

et al. 2023

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Doped Sb2Te3 narrow-band-gap semiconductors have been attracting considerable attention for different electronic and thermoelectric applications. Trivalent samarium (Sm)- and indium (In)-doped Sb2Te3 microstructures have been synthesized by the economical solvothermal method. Powder X-ray diffraction (PXRD) was used to verify the synthesis of single-phase doped and undoped Sb2Te3 and doping of Sm and In within the crystal lattice of Sb2Te3. Further, the morphology, structure elucidation, and stability have been investigated systematically by scanning electron microscopy (SEM), Raman analysis, and thermogravimetric analysis (TGA). These analyses verified the successful synthesis of hexagonal undoped Sb2Te3 (AT) and (Sm, In)-doped Sb2Te3 (SAT, IAT) microstructures. Moreover, the comparison of dielectric parameters, including dielectric constant, dielectric loss, and tan loss of AT, SAT, and IAT, was done in detail. An increment in the electrical conductivities, both AC and DC, from 1.92 × 10–4 to 4.9 × 10–3 Ω–1 m–1 and a decrease in thermal conductivity (0.68–0.60 W m–1 K–1) were observed due to the doping by trivalent (Sm, In) dopants. According to our best knowledge, the synthesis and dielectric properties of (Sm, In)-doped and undoped Sb2Te3 in comparison with their electrical properties and thermal conductivity have not been reported earlier. This implies that appropriate doping with (Sm, In) in Sb2Te3 is promising to enhance the electronic and thermoelectric behavior.

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Section: Powder X-ray Diffraction (Pxrd)supporting

confidence: 66%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

et al. 2023

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On The Application of SiO2/SiC Grating on Ag for High-Performance Fiber Optic Plasmonic Sensing of Cortisol Concentration

2020

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This paper reports on high-accuracy simulation of a grating structure based fiber optic plasmonic sensor for salivary cortisol sensing. Gratings of SiO2 and SiC (one at a time) in combination with a thin Ag layer are considered to be in direct contact with analyte medium (solutions containing different concentrations of cortisol) considering that the groove regions are also filled with analyte. The optimization of Ag layer thickness is carried out to achieve maximum power loss (PL) corresponding to cortisol concentration variation. The variation of PL (in dB) spectra with the angle of incidence (α) is the sensing mechanism of the proposed scheme. Sensing performance is extensively analyzed in terms of sensitivity, limit-of-detection (LOD) and figure-of-merit (FOM) that incorporates both the sensitivity and the width of the corresponding PL curves. While the sensitivity and FOM values are significantly large, the results also reveal that in angular interrogation mode (AIM), an average LOD of 9.9 pg/mL and 9.8 pg/mL is obtained for SiO2 and SiC-based sensor designs, respectively. When the intensity interrogation method (IIM) in place of AIM is considered, an average LOD of 22.6 fg/mL and 68.17 fg/mL is obtained for SiO2 and SiC-based sensor designs, respectively. LOD (with IIM, in particular) is considerably better than the present-state-of-art related to cortisol monitoring. Pragmatic model for possible practical implementation of sensor scheme is also discussed. The involvement of optical fiber in the proposed sensor design makes it possible to implement it as a flexible sensor or for wearable solution for cortisol detection via sweat monitoring as well as for measuring cortisol level in aquaculture tanks where concentration levels are much lower than 10 ng/mL.

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Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor

Cited by 2 publications

References 15 publications

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

On The Application of SiO2/SiC Grating on Ag for High-Performance Fiber Optic Plasmonic Sensing of Cortisol Concentration

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Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor

Cited by 2 publications

References 15 publications

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb2Te3 Microstructures

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb2Te3 Microstructures

On The Application of SiO2/SiC Grating on Ag for High-Performance Fiber Optic Plasmonic Sensing of Cortisol Concentration

Contact Info

Product

Resources

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Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures

Effect of (Sm, In) Doping on the Electrical and Thermal Properties of Sb₂Te₃ Microstructures