Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

Wägner, Hans; Kühnelt, M.; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

doi:10.1103/physrevb.58.10494

Cited by 130 publications

(89 citation statements)

References 46 publications

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“…Examples of SHG spectroscopic studies in semiconductors are still scarce and limited to narrow spectral ranges. [26][27][28] Cubic semiconductors such as GaAs and CdTe, though possessing high-SHG susceptibilities, do not allow one to fulfill phase matching conditions so that their implementation in application devices is not efficient. On the other hand, striking progress has been achieved in the growth of noncubic semiconductor chalcopyrite single crystals such as ZnGeP 2 , AgGaS 2 , and CdGeAs 2 .…”

mentioning

confidence: 99%

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

et al. 2010

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The magnetic europium chalcogenide semiconductors EuTe and EuSe are investigated by the spectroscopy of second harmonic generation ͑SHG͒ in the vicinity of the optical band gap formed by transitions involving the 4f and 5d electronic orbitals of the magnetic Eu 2+ ions. In these materials with centrosymmetric crystal lattice the electric-dipole SHG process is symmetry forbidden so that no signal is observed in zero magnetic field. Signal appears, however, in applied magnetic field with the SHG intensity being proportional to the square of magnetization. The magnetic field and temperature dependencies of the induced SHG allow us to introduce a type of nonlinear optical susceptibility determined by the magnetic-dipole contribution in combination with a spontaneous or induced magnetization. The experimental results can be described qualitatively by a phenomenological model based on a symmetry analysis and are in good quantitative agreement with microscopic model calculations accounting for details of the electronic energy and spin structure.

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confidence: 99%

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

et al. 2010

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“…Figure 5a displays the surface SHG signal produced, considering the intensity of the excitation pulse is constant and the dispersion of the susceptibility is negligible. [18] The coherence length, and consequently, the SHG signal, are found to decrease as the central wavelength of the exciting pulse is tuned towards 1 μm. Our experimental setup makes it possible to directly compare the SHG signal produced by either our sample or the ZnSe window.…”

Section: Second-harmonic Generationmentioning

confidence: 99%

Second‐Harmonic and Terahertz Generation in a Prussian‐Blue Analogue

et al. 2017

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Second-harmonic and terahertz generation is performed in the Rb 0.94 Mn[Fe(CN) 6 ] 0.98 ·0.3H 2 O Prussian-blue analogue. Second-harmonic generation experiments are carried out between 1100 and 1700 nm and within the hysteresis loop of this compound. In the low-and high-temperature phases, our measurements indicate that the effective second-order nonlinear component (2) of this material is small, compared with α-quartz. However, in the high-temperature phase and

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“…The energy bandgap of these semiconductors has a value between 1 eV and 3 eV [14][15][16] which makes them useful for applications in optoelectronic devices in the visible region of the spectrum. But very little investigation of the thermal properties of II-VI compounds has been reported [17].…”

Section: Introductionmentioning

confidence: 99%

Thermal and Optical Properties of Zn1−x Mn x Te Diluted Magnetic Semiconductor Studied by Photoacoustic Spectroscopic Method

Sarkar

Verma

Gupta³

et al. 2010

Int J Thermophys

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Using photoacoustic spectroscopy, the composition-dependent absorption coefficient (α), thermal diffusivity (σ ), and optical bandgap (E g ) of Zn 1−x Mn x Te diluted magnetic semiconductor have been measured. For higher Mn compositions, the absorption spectrum of the Zn-Mn-Te system consists of three regions, viz., the high absorption region, the exponential region, and the weak absorption tail. The bandgap follows a nonlinear variation with composition, showing a downward bowing with a minimum around x = 0.31 as a consequence of the electro-negativity difference between the substituted atoms. The composition-dependent band-edge effective mass of the carriers does not show the bowing behavior indicating that the momentum matrix is not the same for all the Zn 1−x Mn x Te alloys due to different lattice constants. The absorption spectra show that the transition is allowed and direct.

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Dispersion of the second-order nonlinear susceptibility in ZnTe, ZnSe, and ZnS

Cited by 130 publications

References 46 publications

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

Second‐Harmonic and Terahertz Generation in a Prussian‐Blue Analogue

Thermal and Optical Properties of Zn1−x Mn x Te Diluted Magnetic Semiconductor Studied by Photoacoustic Spectroscopic Method

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