2014
DOI: 10.1117/12.2086805
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Dispersive and BEMA investigation on optical properties of photovoltaic thin films

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Cited by 2 publications
(7 citation statements)
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“…As it can be expected absorption edges of µc-Si:H are obviously shifted to lower photon energies (i.e., higher wavelengths) in comparison to a-Si:H, so µc-Si:H absorbs red and near IR light better. Optical band gaps of these mixed-phase thin films based on several approaches were also reported [19,26].…”
Section: Resultsmentioning
confidence: 78%
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“…As it can be expected absorption edges of µc-Si:H are obviously shifted to lower photon energies (i.e., higher wavelengths) in comparison to a-Si:H, so µc-Si:H absorbs red and near IR light better. Optical band gaps of these mixed-phase thin films based on several approaches were also reported [19,26].…”
Section: Resultsmentioning
confidence: 78%
“…To avoid the thicknessdependent deposition of Si:H, the thickness of the films was kept at approximately 400 nm. More details on the deposition conditions are in [19] where also prior studies on samples structure and microstructure were published. XRD, Raman scattering analysis and FTIR spectroscopy show that at dilutions R ≤ 30 the thin films consist of amorphous a-Si:H. At depositions with dilutions R > 30 material transforms to microcrystalline µc-Si:H. Volume fraction ratios of crystalline to amorphous phase p c /p a determined from XRD analysis are in Table 1.…”
Section: Materials Microstructure and Optical Characterizationmentioning
confidence: 99%
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