Dispersive resonance bands within the space-charge layer of a metal-semiconductor junction

Tang, S.-J.; Chang, Tay-Rong; Huang, Chien Chung; Lee, Chang Yeh; Cheng, Cheng Maw; Tsuei, Ku Ding; Jeng, Horng Tay; Mou, Chung‐Yu

doi:10.1103/physrevb.81.245406

Cited by 10 publications

(13 citation statements)

References 29 publications

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“…This picture well describes the subsurface states observed and calculated in this work. Surface states derived from the Ge bulk bands are also observed on other surfaces, such as Pb/Ge(111) [9,10] and Au/Ge(111) [11]. These surface bands can be interpreted as subsurface states derived from the bulk LH or SO bands similarly as those studied in this work.…”

Section: Discussionsupporting

confidence: 66%

Two-dimensional states localized in subsurface layers of Ge(111)

et al. 2013

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The origin of the two-dimensional surface states localized in subsurface regions of the Ge(111) substrate has been studied by density-functional-theory calculations, which were compared with the experimental results of angle-resolved photoelectron spectroscopy. For the Bi/Ge (111) (111)-(1×1), and Tl/Ge(111)-(1×1) surfaces, we found that the surface states are classified into three groups. The energy dispersion and the orbital character for each band implies the relationship between the subsurface states and the bulk heavy-hole, light-hole, and spin-orbit split-off bands. These results indicate that the subsurface states originate from the bulk bands that are perturbed due to the truncation of the three-dimensional periodicity at the surface.

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Section: Discussionsupporting

confidence: 66%

Two-dimensional states localized in subsurface layers of Ge(111)

et al. 2013

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“…In comparing the present Au/Ge(111) system to other metal adsorbates on Ge(111) at 1 ML coverage, the Pb/Ge(111)-( √ 3 × √ 3) reconstruction comes to mind 32 (not to be confused with the dilute 1/3 ML α-phase 4 ). In that ARPES study, bands at the point with holelike dispersions, which bear close resemblance to the H states in Au/Ge(111), were also attributed to Ge-derived states.…”

Section: Discussionmentioning

confidence: 99%

Electronic band structure of the two-dimensional metallic electron system Au/Ge(111)

et al. 2011

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The two-dimensional electron system Au/Ge(111)-(√ 3 × √ 3)R30 • is studied in detail by angle-resolved photoemission and density functional theory calculations. In combining these results, we identify four metallic bands which are either of dominantly Au or Ge character, respectively. The largest Fermi surface sheet, originating from Au orbitals, is suggestive of a nesting condition due to its hexagonal shape. However, a charge density wave transition is not observed between room temperature and 10 K. The electronic structure obtained by density functional theory with inclusion of a self-energy correction is in good agreement with the experiment. These calculations also indicate that there is significant spin-orbit splitting, especially in the Au-related bands, which is partly of Rashba character.

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“…A highly doped n-type Ge(111) wafer, 10 17 -10 18 cm −3 , was used. The cleaning procedure for a Ge(111)-c(2 × 8) surface is described elsewhere [18]. To form the Pb/Ge(111)-× 3…”

Section: Methodsmentioning

confidence: 99%

“…Second, the bands resembling the SO and LH band edges appear broader. Those bands must be resonances localized within the Ge SCL [18] so that they become observable from both a Pb/Ge(111)-× 3…”

Section: Theoretical Detailsmentioning

confidence: 99%

“…3 R30°s urface and a 2 ML Pb film on Ge(111), which have disparate lattice structures [18,20]. According to preceding work [18], the HH-, LH-, and SO-like resonance bands are caused by the coupling between surface states (quantum-well states) and Ge band edges within the SCL, and the NSO-like band is a surface resonance within the Ge gap induced by SOI, but its origin was not addressed. Figure 2 shows the dependence of those band-edge-like resonance bands on photon energies at 21.2, 25, and 30 eV, respectively.…”

Section: Comparison Between Data and Calculationmentioning

confidence: 99%

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Rashba effect within the space–charge layer of a semiconductor

et al. 2014

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The observed heavy-hole, light-hole and split-off band edges of a semiconductor are the well known consequence of two physical processes: atomic spin-orbital interaction and solid-state band-band anticrossing. In this work, we examined the four band-edge-like bands in great detail within the Ge space-charge layer with either Pb/Ge(111)-× 33 R30°or a 2 ML Pb film on Ge(111). Our results reveal that the conventional picture of band edges for a semiconductor is actually crude. In addition, momentum-dependent Rashba splitting effect can be included to explain the observed non-split-off band, indicating the Rashba effect as an intrinsic property near a semiconductor surface.

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Dispersive resonance bands within the space-charge layer of a metal-semiconductor junction

Cited by 10 publications

References 29 publications

Two-dimensional states localized in subsurface layers of Ge(111)

Two-dimensional states localized in subsurface layers of Ge(111)

Electronic band structure of the two-dimensional metallic electron system Au/Ge(111)

Rashba effect within the space–charge layer of a semiconductor

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