Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Abstract

The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal spike, dark signal non-uniformity (DSNU), noise (VN), saturation output signal voltage (VS), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike.

Displacement damage induce degradation of COTS array CCDs irradiated by neutron beams from a nuclear reactor

“…Displacement damage caused by neutron or proton irradiations can induce a remarkable increase of the mean dark signal, dark signal nonuniformity (DSNU), and the generation of dark signal spikes in CCDs. The degradations of the mean dark signal, DSNU, and dark signal spikes induced by reactor neutron irradiation have been investigated in our previous study [22]. The test methods and degradation mechanisms of the mean dark signal, DSNU, and dark signal spikes in the CCDs were also studied in [22].…”

“…The D d induced by monoenergetic particles are determined by the radiation fluences and the NIEL values. The ΔCTI increase induced by neutron displacement damage dose can be expressed as [22] ΔCTI…”

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

“…In addition, neutron radiation mainly brings displacement damage because the TID calculated as the ratio of n/γ is very low and has negligible influence of the CMOS APS behaviors. 13 FIG. 3.…”

“…13 After neutron radiation, the DSNU of AN01 increases remarkably. When the AN01 was re-irradiated with 60 Co γ-rays, its pixel-to-pixel non-uniformity fluctuates with the mean dark signal increase induced by TID.…”

“…8 Displacement damage effects on CMOS APS image sensors induced by neutron radiation from a nuclear reactor have been presented in Ref. 13. Displacement damage effects on a radiation-hardened CMOS APS have been discussed in a Author to whom correspondence should be addressed.…”