“…This generates the injection of recombining point defects and, consequently, the decrease of the ionic resistivity (inversely proportional to the concentration of point defects). On the order hand, the growth of the concentration of recombining point defects (interstitials cations and cationic vacancies) in the film lead to the recombination reaction (interstitial cation + cationic vacancies → lattice) originating, subsequently, the growth of the ionic resistivity, generating the minimum (D'Alkaine & Santanna, 1998), (D'Alkaine, et al, 2004), (D'Alkaine, et al, 2007, (Boscheto, 2008), (D'Alkaine, et al, 1993. Source Authors.…”