2016
DOI: 10.1109/tasc.2016.2515585
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Dissipation Effects of the Phase in Higher Order Switching Events of Intrinsic Josephson Junctions

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Cited by 9 publications
(13 citation statements)
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“…However, the anomalous increase of T 2nd cr was found to be independent of the device structure of IJJs with different heat-transfer environment 7) and the order of phase switches, 10) throwing doubt on the self-heating effects after the 1st SW.…”
mentioning
confidence: 95%
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“…However, the anomalous increase of T 2nd cr was found to be independent of the device structure of IJJs with different heat-transfer environment 7) and the order of phase switches, 10) throwing doubt on the self-heating effects after the 1st SW.…”
mentioning
confidence: 95%
“…11) In addition, the microwave-induced resonant peak structure was observed in the switching current distribution below T 2nd cr , suggesting the occurrence of the quantum phase escapes and the formation of energy level quantization (ELQ) in a potential well. 12,13) Thus, many experimental results 7,[9][10][11][12][13][14][15] support that the MQT state is realized even in the 2nd SWs of IJJs, although the value of T cr (typically ∼ 10 K for the optimal doped Bi2212 IJJs) is much higher than the value predicted in the conventional theory. 16) As a qualitative explanation for this anomaly, we proposed that the ac Josephson current occurring after the 1st SW possibly passes through other junctions near the phase-switched junction, inducing the rapid oscillation in a tilted-washboard potential and effectively reducing the barrier height ∆U(I) for the 2nd SW. 11) Similar effects are expected for the quantum phase escapes under the strong microwave irradiation.…”
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confidence: 95%
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“…The bridges in the ab plane and along the c axis used for the measurements of normal state anisotropy, as shown schematically in the insets of Figs. 3(a) and 3(b), were fabricated by using the focused ion beam (FIB) technique [47][48][49].…”
Section: Methodsmentioning
confidence: 99%
“…The c-axis bridge, as shown schematically in Fig. 1(b), was fabricated by using the focused ion beam (FIB) technique [58,59]. The single crystal was first cleaved into a slice with a thickness smaller than 10 µm, and fixed , where λc is the penetration depth along c-axis, ∼ 1.6 µm at 5 K [32].…”
Section: Methodsmentioning
confidence: 99%