The use of FEM models to simulate the Bean critical state is used in two particular geometries: the disk and the sphere exposed to a uniform magnetic field. Two FEM approaches have been used, the Adaptive Resistivity Algorithm under the ANSYS framework, and the H-Formulation using the COMSOL software. In this work, the validity of these methods to solve twodimensional and three-dimensional models is proven through the comparison to the existing theories. In order to reproduce the experimental magnetization cycles, the critical current density dependence on magnetic field has been derived from measurements in YBCO thin disk at 65 K and a Nb spherical samples at 6.0 K. While the YBCO disk critical state is well reproduced by our models, the Nb sample shows more complicated response which cannot be simulated just considering a critical state model.