Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing

Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Li, Hong; Fu, Liming; Li, Ming; Que, Duanlin

doi:10.1016/j.jcrysgro.2007.06.037

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Oxygen Precipitation1

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“…As can be seen, the [O i ]s ia recovered and is slightly higher in the GCZ than in the CZ silicon, indicating the easier dissolution of oxygen precipitates in the GCZ silicon. (Chen et al, 2007d) Germanium atoms locate at the substitutional sites in CZ silicon, and induce distortion and local stresses in silicon lattice due to their larger atom radius. So, the lattice sites where germanium atoms locate are provided with potential activities and inclined to interact with other structural defects and / or impurities.…”

Section: Oxygen Precipitationmentioning

confidence: 99%