Distance-dependent lateral photovoltaic effect in a-Si:H(p)/a-Si:H(i)/c-Si(n) structure

Qiao, Shuang; Chen, Jianhui; Liu, Jihong; Fu, Ning; Yan, Guoying; Wang, Shufang

doi:10.1016/j.apsusc.2015.08.144

Cited by 15 publications

(8 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To date, numerous materials and constructions have been deeply studied through the experiment of LPE. Different from the traditional research where LPE is widely reported in metalsemiconductor systems [8][9][10][11][12][13], in this study we report that a simple SiO 2 /p-Si/SiO 2 structure can also generate a conspicuous LPE and such effects are mainly dominated by the interface states at SiO 2 /p-Si interface, which has never been adopted in applications. Compared with conventional junction devices, this structure owns several advantages including brief structure and outstanding stability due to the excellent properties of silicon [14][15][16][17][18].…”

Section: Introductioncontrasting

confidence: 65%

High sensitivity Si-based photodetection with nanoscale protective layer based on interface states

et al. 2019

View full text Add to dashboard Cite

A large lateral photovoltaic effect has been observed at the interface of SiO2/p-Si/SiO2 structure. Different from the traditional Schottky junction or PN junction device, this photovoltage is mainly dominated by the interface states existing at SiO2/p-Si interface, where the covered nanoscale SiO2 layer brings this device a stable and high photoelectric performance. These interface states can be explained as built-in field caused by the band bending at interface, which regulates the generation and diffusion of photo induced carriers. In this study, we discuss clearly the factors that impact greatly on the photovoltage output and sensitivity, including the oxide thickness, resistivity and tunneling effect. We believe this simple but efficient device will be beneficial for the exploring in photoelectric detection.

show abstract

Section: Introductioncontrasting

confidence: 65%

High sensitivity Si-based photodetection with nanoscale protective layer based on interface states

et al. 2019

View full text Add to dashboard Cite

show abstract

“…This phenomenon would be beneficial to high sensitivity UV sensor for accurate position detection by lateral photovoltaic effect. [34] Figure 1. Reported external quantum efficiencies (EQE) exceeding 100% in solar cells.…”

Section: Mace Of B-si and Surface Passivationmentioning

confidence: 99%

“…This phenomenon would be beneficial to high sensitivity UV sensor for accurate position detection by lateral photovoltaic effect. [ 34 ]…”

Section: Mace Of B‐si and Surface Passivationmentioning

confidence: 99%

Multi‐Carrier Generation in Organic‐Passivated Black Silicon Solar Cells with Industrially Feasible Processes

Zhou

Wan

et al. 2022

Small

Self Cite

View full text Add to dashboard Cite

The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high‐energy photon reflectance and high‐quality surface passivation. In the photovoltaics industry, metal‐assisted chemical etching (MACE) to afford black silicon (b‐Si) can provide a low high‐energy photon reflectance. However, an industrially feasible and cheaper technology to conformally passivate the outer‐shell defects of these nanowires is currently lacking. Here, a technology is introduced to infiltrate black silicon nanopores with a simple and vacuum‐free organic passivation layer that affords millisecond‐level minority carrier lifetimes and matches perfectly with existing solution‐based processing of the MACE black silicon. Advancements such as the demonstration of an excellent passivation effect whilst also being low reflectance provide a new technological route for inverse Auger multiple carrier generation and an industrially feasible technical scheme for the development of the MACE b‐Si solar cells.

show abstract

“…, respectively. Therefore, a laser position-dependent LPV (x) is obtained between the two electrodes due to their difference in the carrier density, which can be written as [17,18]:…”

Section: Lpe In P-n Junction or Heterojunctionmentioning

confidence: 99%

Lateral photovoltaic effect based on novel materials and external modulations

Qiao¹,

Liang²,

Liu³

et al. 2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

With the development of nanoengineering and nanotechnology, numerous emerging materials and constructions are being presented in optoelectronics to challenge traditional photoelectric effects and detecting techniques, and are inspiring innovation and growth in photoelectric research fields. Recently, due to its unique working mechanism, the lateral photovoltaic effect (LPE) has been identified as an indispensable and effective method of studying the properties of novel materials and also shows promising application in position sensors and photodetection. This article will present a comprehensive review of the recent progress on the LPE in novel materials, including metal nanomaterials, oxide semiconductors, organic semiconductors, two-dimensional layered materials, and perovskites. Moreover, it is demonstrated that the LPE is also very sensitive to different constructions or external modulations and can be substantially tuned by changing the structure or morphology of materials, adding external fields, and utilizing plasmon resonance. This summary may provide a comprehensive picture regarding the recent achievements of the LPE in novel materials and external modulations. Finally, we also present a discussion of the challenges and potential trends of the LPE in the near future.

show abstract

Distance-dependent lateral photovoltaic effect in a-Si:H(p)/a-Si:H(i)/c-Si(n) structure

Cited by 15 publications

References 31 publications

High sensitivity Si-based photodetection with nanoscale protective layer based on interface states

High sensitivity Si-based photodetection with nanoscale protective layer based on interface states

Multi‐Carrier Generation in Organic‐Passivated Black Silicon Solar Cells with Industrially Feasible Processes

Lateral photovoltaic effect based on novel materials and external modulations

Contact Info

Product

Resources

About