Distinct band UV–Visible photo sensing property of ZnO-Porous silicon (PS):p-Si hybrid MSM heterostructure

Das, M.; Sarmah, S.; Barman, Dipak; Sarma, Bornali; Sarkar, D.

doi:10.1016/j.mssp.2020.105188

Cited by 22 publications

(1 citation statement)

References 42 publications

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“…From the figure, it can be observed that c-Si exhibits 35-45% reflectivity, while PSi decreases reflectivity to 15-25%. These results indicates that absorption of PSi in the absolute spectral range is about 2 times higher than that of c-Si, which results from the porous structure with rough surface [27]. In addition, because the surface of PSi has more defects than that of c-Si, trap levels are formed at the band edge, which is easy for electron transmission and conducive to allowing more photons to input [28].…”

Section: Resultsmentioning

confidence: 92%

A MSM Visible-near-Infrared Wavelength Photodetector Based on PbS Quantum Dots/Porous Silicon Hybrid Structure

He,

Li,

Zhang

et al. 2023

Preprint

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porous silicon-based photodetectors have attracted more researches due to their high luminous efficiency, good stability and low cost. In this paper, a PbS quantum dots/porous silicon hybrid structure has been fabricated. The PbS quantum dots (QDs) partly infiltrated into the porous silicon (PSi) layer and partly deposited on its surface, which could increase the absorption of near-infrared wavelength range and extend the light absorption in silicon for wavelengths longer than 1100 nm. After that, A metal-semiconductor-metal (MSM) device is fabricated and its response spectrum could extend to the 1200 nm at -3 V. As a silicon-based photodetector (PD), one can envision its role for operation from visible light to short-wavelength infrared range.

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Section: Resultsmentioning

confidence: 92%