Distinction between surface and bulk states in surface-photovoltage spectroscopy

Leibovitch, M.; Kronik, Leeor; Fefer, E.; Shapira, Yoram

doi:10.1103/physrevb.50.1739

Cited by 43 publications

(27 citation statements)

References 22 publications

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“…Let us examine the quantitative difference between such charge modi®cation in surface and in bulk states: In the depletion approximation, a combination of Eqs. can be used as a basis for distinction between surface and bulk states, by relying on the dependence of the SPV on illumination intensity [116]. Their arguments follow.…”

Section: Distinction Between Surface and Bulk Statesmentioning

confidence: 99%

“…Leibovitch et al have further suggested that the high intensity end of the sub-bandgap SPV f I curve can also be used for site assignment [116]. For bulk states, the shift of the SCR edge with increasing illumination is expected to modify the density of bulk states accessible to excitation which produces a SPV signal (i.e., which is in the SCR).…”

Section: Distinction Between Surface and Bulk Statesmentioning

confidence: 99%

“…The relative importance of surface and bulk transitions has been examined by Leibovitch et al [116]. By performing two integrations of the Poisson equation and using integration by parts, one may recast the Poisson equation in the one-dimensional integral form:…”

Section: Sub-bandgap Spvmentioning

confidence: 99%

“…Interestingly, a relation of the form of Eq. (5.13) is predicted for some illumination regime by all theoretical approaches, including calculations based on the depletion approximation [556], on barrier SPV [557], on a Schottky-diode approach [193,214], on the constant quasi Fermi level approximation [610,611], and even on the Dember effect [79,116]. Aphek et al [611] have found that if k p ak n is either very large or very small, will be approximately 1 (and in practice somewhat smaller [214]), whereas for intermediate values of k p ak n , is approximately 0.5.…”

Section: Surface Band Bending ± Photosaturationmentioning

confidence: 99%

See 3 more Smart Citations

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,528

804

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Section: Distinction Between Surface and Bulk Statesmentioning

confidence: 99%

Section: Distinction Between Surface and Bulk Statesmentioning

confidence: 99%

Section: Sub-bandgap Spvmentioning

confidence: 99%

Section: Surface Band Bending ± Photosaturationmentioning

confidence: 99%

See 2 more Smart Citations

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,528

804

View full text Add to dashboard Cite

“…The spatial distribution of the SPV-induced charge carriers in the band-bending potential opposes the original charge distribution that gave rise to the band bending. In this way, these photoinduced charges cancel the original electrostatic potential and thus lead to a decrease in the band bending [46][47][48][49][50][51]. Insight into the delicate synergy of SPV effects and photostimulated desorption of foreign species from the sample surface will be given in Sec.…”

Section: A Bi 2 Sementioning

confidence: 99%

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

et al. 2015

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Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, i.e., the provision of knobs with which to tune properties, stoichiometric variation and surface decoration are two effective approaches that have been followed. In angleresolved photoelectron spectroscopy (ARPES) experiments, both approaches are seen to lead to electronic band-structure changes. Most importantly, such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases. The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of super-band-gap light a topological insulator surface has been exposed to under typical ARPES experimental conditions. Our results show that this third knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous and direct competition with the latter. The data clearly point towards surface photovoltage and photoinduced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary, and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a detailed framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature, and photon exposure. These knobs can be used in conjunction to fine tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

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Construction of Shallow Surface States through Light Ni Doping for High‐Efficiency Photocatalytic Hydrogen Production of CdS Nanocrystals

Li¹,

Zhang²,

Jiang³

et al. 2013

Chemistry A European J

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Ni-doped CdS nanowires were synthesized by a simple one-step method. X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy confirmed that light Ni doping can form shallow surface states due to the presence of substitutional Ni ions, and heavy Ni doping can form deep surface states due to the presence of interstitial Ni ions. Surface photovoltage spectroscopy and transient photovoltage measurements revealed that the shallow surface states can prolong the lifetime of the photogenerated charge carriers, whereas the deep surface states lead to recombination of the photogenerated charge carriers. The relationship between different surface states and the photocatalytic performance of CdS nanocrystals are discussed. The enhanced density of shallow surface states due to light Ni doping significantly promotes photocatalytic H2 production.

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Distinction between surface and bulk states in surface-photovoltage spectroscopy

Cited by 43 publications

References 22 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

Construction of Shallow Surface States through Light Ni Doping for High‐Efficiency Photocatalytic Hydrogen Production of CdS Nanocrystals

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