In the present work, first-principles density functional theory calculations were carried out to explore the intrinsic interface coupling and electrostatic modulation as well as the effect of ferroelectric polarization reversal in the MoS 2 /BiAlO 3 (0001) [MoS 2 /BAO(0001)] hybrid system. In addition to the interaction mechanism of the large ionic−van der Waals (vdW) coupling, our results indicate that the electronic properties of monolayer MoS 2 on the BAO(0001) polar surface can be effectively modulated by reversing the ferroelectric polarization and/or engineering the domain structures of the substrate. Due to the unusual charge transfer between the MoS 2 overlayer and the down-polarized ferroelectric BAO(0001) substrate, in the final analysis, the physical mechanism determining the interfacial charge transfer in the MoS 2 /BAO(0001) hybrid system is attributed to the specific band alignment between the clean BAO(0001) surface and the freestanding monolayer MoS 2 . Furthermore, our study predicts that MoS 2 -based ferroelectric field-effect transistors and various types of seamless p−i, n−i, p−n, p + −p, and n + −n homojunctions possessing an extremely steep built-in electric field can be fabricated by reversing the ferroelectric polarization and/or patterning the domain structure of the BAO(0001) substrate.