Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions

Moussodji, Jeff; Kociniewski, T.; Khatir, Zoubir

doi:10.1016/j.microrel.2013.07.089

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…Insulated gate bipolar transistor module has been widely used to various fields of high power applications because of their attractive properties, such as high-current handling capability and high breakdown resistance [1][2][3]. However, IGBT module still encounter many challenges with demand of high degree integration of electronic products.…”

Section: Introductionmentioning

confidence: 99%

Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology

Wang

Xing

2022

J. Phys.: Conf. Ser.

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This paper presents a degradation behavior of high-power semiconductor modules, i.e., IGBT, with sintered silver by power cycle test and thermal cycle test. The electrical characteristics, such as on-state voltage drop, thermal resistance and leakage current, were studied. For power cycle test, the IGBT module still has an acceptable electrical performance after the 30 K power cycles. No noticeable changes can be found in the die-attach layer, while the DBC-attach layer begins to fail after 30 K power cycles. For the thermal cycling test, the electrical characteristics of the IGBT module were only tested within the first 300 cycles because the Al2O3 DBC substrate failed first before the failure of the bonding layers. Finally, finite element methods (FEM) were used to analyze thermal and mechanical stress distribution and failure mechanism of the bonding layers.

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Section: Introductionmentioning

confidence: 99%

Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology

Wang

Xing

2022

J. Phys.: Conf. Ser.

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“…In a recent study [3], a comparison between ageing effects induced by different stressing experiments, namely, SC and unclamped inductive switching (UIS) tests, was performed for identical dissipated energies at each cycle, and it was surprisingly found that the timeto-failure was considerably test-dependent. In this paper, an attempt to provide an explanation to these findings is made through a wide experimental and simulation analysis focused on the degradation of the chip metallization [4][5][6].…”

Section: Introductionmentioning

confidence: 99%