Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate

Leempoel, P.; P., Descamps,; Meerenedre, T. Kervyn de; Charliac, J.; Cabarrocas, Pere Roca i; Bulkin, Pavel; Daineka, D.; Dao, T.; Kleider, Jean‐Paul; Gueunier‐Farret, Marie‐Estelle; Longeaud, Christophe

doi:10.1016/j.tsf.2007.12.045

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…The undoped µc‐Si:H films were deposited on Corning 1737 glass (10 × 10 cm 2 ) and c‐Si substrates using pure silane (SiH 4 = 42 sccm) in an MDECR reactor 3, 4. Bias voltage to the substrate electrode with respect to the grounded chamber is provided by connecting it to RF (13.56 MHz) power supply.…”

Section: Methodsmentioning

confidence: 99%

“…A cost‐effective fabrication of a thick highly crystallized µc‐Si:H layer presents the challenges of balancing a fast deposition process with achieving a uniform device quality layer. Matrix distributed electron cyclotron resonance (MDECR) plasma enhanced chemical vapor deposition (PECVD) is a system that produces a high electron density and consequently a higher precursor dissociation compared to conventional RF PECVD 3, 4. The consequent fast deposition and higher precursor utilization allows cost‐effective deposition of µc‐Si:H film on large areas using pure silane as feed gas 4.…”

Section: Introductionmentioning

confidence: 99%

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Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

Ram

Kroely

Bulkin

et al. 2010

Physica Status Solidi (a)

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Microcrystalline silicon films were deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma enhanced chemical vapor deposition (PECVD) system using pure silane, under varying substrate bias conditions. Microstructural characterization of the films shows a lower void fraction and a preponderance of nanograins in films deposited at negative bias, while in positive bias a thin incubation layer is seen with a higher void fraction. Plasma emission studies reveal higher electron temperature and more atomic H at positive bias, which lead to early onset of crystallization. The microstructural properties of the films are correlated with the dark and phototransport properties. Our study demonstrates the importance of substrate bias in controlling the ion energy and properties of films deposited in the MDECR reactor.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

Ram

Kroely

Bulkin

et al. 2010

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Amorphous silicon (a-Si) for photovoltaic applications can be deposited using the techniques of plasma-enhanced chemical vapor deposition (PECVD) [1][2][3], catalytic CVD (Cat-CVD) [4,5], photo-CVD [6,7], sputtering [8], and so forth. Since it is usually deposited at a low temperature, lowcost or flexible materials like glass, plastic, or stainless steel can be adopted as the substrate.…”

Section: Introductionmentioning

confidence: 99%

Three-Terminal Amorphous Silicon Solar Cells

Tai

Lin

Wang³

2011

International Journal of Photoenergy

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Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

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Low-temperature plasma processing for Si photovoltaics

Xiao

Ostrikov

2014

Materials Science and Engineering: R: Reports

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Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si:H at very high rate

Cited by 6 publications

References 12 publications

Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

Effect of ion energy on structural and electrical properties of intrinsic microcrystalline silicon layer deposited in a matrix distributed electron cyclotron resonance plasma reactor

Three-Terminal Amorphous Silicon Solar Cells

Low-temperature plasma processing for Si photovoltaics

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