Distributed magnetic coupling synchronizes a stacked 25-kV MOSFET switch

IEEE Trans. Plasma Sci.

2010

The intensive use of semiconductor devices enabled the development of a repetitive high-voltage pulse-generator topology from the dc voltage-multiplier (VM) concept. The proposed circuit is based on an odd VM-type circuit, where a number of dc capacitors share a common connection with different voltage ratings in each one, and the output voltage comes from a single capacitor. Standard VM rectifier and coupling diodes are used for charging the energy-storing capacitors, from an ac power supply, and two additional on/off semiconductors in each stage, to switch from the typical charging VM mode to a pulse mode with the dc energystoring capacitors connected in series with the load. Results from a 2-kV experimental prototype with three stages, delivering a 10-mu s pulse with a 5-kHz repetition rate into a resistive load, are discussed. Additionally, the proposed circuit is compared against the solid-state Marx generator topology for the same peak input and output voltages.

“…The most common solutions include isolation transformers [14] but diode strings are also described [2]. Fig.…”

Section: Design Considerationsmentioning

confidence: 99%

A DC Voltage-Multiplier Circuit Working as a High-Voltage Pulse Generator

IEEE Trans. Plasma Sci.

2010

“…The most common include isolation transformers [7] but diode strings are also described [5][6]. In this work, to power the driving units an ac high frequency voltage source power supply was used.…”

Section: B Marx Derived Series Stacked Semiconductor Switchesmentioning

confidence: 99%

Solid-state Marx technique for uniform voltage distribution in series stacked semiconductor switches

2010 IEEE International Power Modulator and High Voltage Conference

Canacsinh

Silva

2010

This paper describes the operation of a solid-state Marx type circuit to be used as a serial and parallel switch in pulsed power applications. The proposed circuit, based on the Marx generator concept, reduces the voltage stress on series stacks of semiconductors, distributing the voltage uniformly. Experimental results from a 10 kV laboratory circuit, using 1200 V semiconductors in the solid-state Marx circuit, with ten stages, are reported and discussed, considering high and low duty cycle voltage pulse operation into a capacitive type load 1 .

“…Because of techniques based on semiconductor technology, the most common method to generate bipolar pulses includes the use of two independent dc high-voltage (HV) power supplies (PSs), which are directly switched for positive and negative pulses, respectively [1]- [3]. In addition, topologies brought from dc-dc converters, which are commonly used in the power electronics field, such as the full-bridge, halfbridge, and multilevel converters, are applied [4]- [6].…”

Section: Introductionmentioning

confidence: 99%

Marx-Type Solid-State Bipolar Modulator Topologies: Performance Comparison

Canacsinh

IEEE Trans. Plasma Sci.

Silva

2012

The operation of generalized Marx-type solid-state bipolar modulators is discussed and compared with simplified Marx-derived circuits, to evaluate their capability to deal with various load conditions. A comparative analysis on the number of switches per cell, fiber optic trigger count, losses, and switch hold-off voltages has been made. A circuit topology is obtained as a compromise in terms of operating performance, trigger simplicity, and switching losses. A five-stage laboratory prototype of this circuit has been assembled using 1200 V insulated gate bipolar transistors (IGBTs) and diodes, operating with 1000 V dc input voltage and 1 kHz frequency, giving 5 kV bipolar pulses, with 2.5 µs pulse width and 5 µs relaxation time into resistive, capacitive, and inductive loads.