Distributed parameter analysis of dark I–V characteristics of the solar cell: estimation of equivalent lumped series resistance and diode quality factor

Vishnoi, Akshay; Gopal, R.; Dwivedi, Raaz; Srivastava, Shikha

doi:10.1049/ip-g-2.1993.0025

Cited by 16 publications

(3 citation statements)

References 2 publications

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“…Were calculated the root mean squared error (RMSE), the mean bias error (MBE) and mean absolute error (MAE) which are key measures of accuracy for fitting curves [21]. (12) where V i(meas) is the measured voltage; V i(calc) is the calculated voltage and N the number of variables. It can be noticed that by replacing the parameters calculated in (1) or (2), the variable used as the independent variable is the current (I), so that V = f(I).…”

Section: Numbers Of Cells Connected In Series 36mentioning

confidence: 99%

The application of Trust Region Method to estimate the parameters of photovoltaic modules through the use of single and double exponential models.

Rodrigues¹,

Camacho

Matos³

2024

RE&PQJ

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This paper presents a methodology for the extraction of parameters of photovoltaic (PV) modules through the use of electric models with single and double exponentials. The aim of the proposed method was extract the parameters directly from measured curves applying the Trust Region Method to solve a system of equations f(x i ). The variables x i are the photocurrent (I ph ), the reverse saturation current (I o ), the ideality factor (A i ), series resistance (R s ) and the shunt resistance (R sh ). The validation method is made by approximating the IV curves using the calculated parameters. So, is provided a statistical analysis of errors from the curves obtained in a way to assess the feasibility of the method. A comparison between the results obtained through the two circuit models is also provided.

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Section: Numbers Of Cells Connected In Series 36mentioning

confidence: 99%

The application of Trust Region Method to estimate the parameters of photovoltaic modules through the use of single and double exponential models.

Rodrigues¹,

Camacho

Matos³

2024

RE&PQJ

View full text Add to dashboard Cite

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“…On the other hand, these solutions are too cumbersome for the implementation in a grid optimisation tool as they include several infinite sums. Finally, Vishnoi et al [10] devised an approximate solution to Equation (1) in one dimension including contact and base resistances and assuming a one diode model for J z (ψ). An expression was derived from the J(ψ) curve for the equivalent series resistance demonstrating the coupling effect of both metallised and un-metallised portions of the solar cell.…”

Section: Introductionmentioning

confidence: 99%

Analytical models for the series resistance of selective emitters in silicon solar cells including the effect of busbars

Mäckel¹,

Micard

Varner³

2013

Progress in Photovoltaics

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A theoretical analysis of the power loss and series resistance of the front side emitter in silicon solar cells is presented. Existing 1D models (infinitely long finger) and 2D models (including the effect of busbars) of emitter series resistance contribution are extended to the case of selective emitters. The general case of different current densities for both emitters in the selective emitter scheme is considered in these extensions. The resulting models depend on the individual sheet resistances and current densities in both emitters and the device's overall grid geometry. The models are corroborated by finite element simulation of the potential in the emitter. An excellent agreement is found between the analytical models, and the simulations for a wide range of sheet resistances typically encountered in silicon solar cells. Grid simulations using the 2D model are applied to solar cells with selective emitters, where the width of the low‐resistive emitter was varied. The simulations demonstrate that the 2D model can explain the absolute change in fill factor observed in these cells. Copyright © 2013 John Wiley & Sons, Ltd.

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“…The dark behaviour of a solar cell has traditionally been modelled by means of an equivalent circuit consisting of a lumped series resistance (R S ), a lumped shunt resistance (R P ) and a diode with an ideality factor ranging from 1 to 2. 1,2 In most cases, the experimental data for III-V solar cells cannot be fitted properly using just one diode. Consequently, a two-diode model consisting of one diode with an ideality factor equal to 1 (m 1 ) and one diode with an ideality factor equal to 2 (m 2 ) should be used whose equivalent circuit is shown in Figure 1 and it is described by:…”

Section: Introductionmentioning

confidence: 99%

Explanation for the dark I–V curve of III–V concentrator solar cells

Galiana

Algora

Rey‐Stolle

2007

Progress in Photovoltaics

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The measurement of the dark I-V curve is one of the most straightforward methods for characterizing solar cells. Consequently, an accurate knowledge of its meaning is of high relevance for the comprehension and technological feedback of these devices. In this paper, an explanation of the dark I-V curve for concentrator III-V solar cells is presented using a 3D (three-dimensional) model in order to provide a proper data fit that provides meaningful physical parameters that are also compatible and coherent with a data fit from illumination curves. The influence on the dark I-V curve of the most significant series resistance components of concentrator solar cells is also analysed concluding that only the vertical component as well as the front contact-specific resistance can be assessable by means of this characterization method while both emitter and metal sheet resistances cannot be detected. For comparison purposes, the same experimental data have been fitted by means of a traditional two-diode model showing that, although an accurate dark I-V curve fitting can be achieved, the extracted parameters are unable to reproduce illumination data since lumped models assume the same ohmic losses distribution for both dark and illumination conditions.

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Distributed parameter analysis of dark I–V characteristics of the solar cell: estimation of equivalent lumped series resistance and diode quality factor

Cited by 16 publications

References 2 publications

The application of Trust Region Method to estimate the parameters of photovoltaic modules through the use of single and double exponential models.

The application of Trust Region Method to estimate the parameters of photovoltaic modules through the use of single and double exponential models.

Analytical models for the series resistance of selective emitters in silicon solar cells including the effect of busbars

Explanation for the dark I–V curve of III–V concentrator solar cells

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